SI4435DYTRPBF

The SI4435DYTRPBF is a high-performance N-Channel Enhancement Mode MOSFET targetting high-speed switching applications. It offers the benefits of low gate charge, low leakage current and an industry-leading fast switching frequency, making it well-suited for use in power switching and other low-power-consumption applications. The SI4435DYTRPBF offers an RDS(on) of 500 mOhms and an on-state drain current of 320 A.

The SI4435DYTRPBF is a versatile MOSFET with a wide range of applications. It is most commonly used in high-speed switching applications such as switching power supplies, DC-DC converters, automotive electronics, motor control, and other DC motor speed control applications. This device is also used in digital logic level shifting applications, as well as in power amplifiers, digital and analog audio amplifiers, and line drivers. Additionally, the SI4435DYTRPBF is well-suited for use in high-speed switching and relay control, digital UPS, computer power supply systems, power control systems, consumer digital equipment, and others.

The SI4435DYTRPBF is designed to operate in an Enhancement Mode, which is a type of voltage-controlled MOSFET. This type of MOSFET usually consists of three terminals: Source (S), Drain (D), and Gate (G). When a voltage is applied to the Gate terminal, it attracts electrons from the Source terminal, which increases the conductivity between the source and drain. The drain voltage raises up and a channel forms from source to drain. This channel is known as a conducting channel because of its increased conductance.

The threshold voltage of an MOSFET is an important factor to consider when selecting one for a particular application. The threshold voltage of the SI4435DYTRPBF is 2.5 V, which is relatively low compared to other MOSFETs. This low threshold voltage allows the MOSFET to be driven at lower voltages, which results in a lower overall power consumption.

The SI4435DYTRPBF offers high-speed switching capabilities and improved reliability due to its robust design. Its high-speed switching capability is due to its low gate charge and fast switching frequency, which is much higher than that of other MOSFETs. Additionally, its short circuit protection prevents it from being damaged in the event of a short circuit.

The SI4435DYTRPBF is an ideal choice for a wide range of applications. Its low gate charge and low threshold voltage allow it to be used in applications that require fast switching and low power consumption. Additionally, its robust design allows it to be used in applications where reliability and durability are essential.