SI4464DY-T1-E3

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The SI4464DY-T1-E3 is a Single N-Channel Enhancement Mode Field Effect Transistor suitable for a wide range of applications, including MOSFET assemblies, switching applications, power amplifier circuits, low voltage battery operated applications, and RF and low frequency components.

The SI4464DY-T1-E3 was designed and developed using a proprietary method called “Exactpolarity” which ensures that each pin accurately corresponds to its internal circuit, enabling the precise application of power and control signals with no unintended impacts to other circuits.

It features a low Drain-Source On-State Resistance that is approximately equal to the Gate-Source On-State Resistance, making it suitable for switching applications with low losses. Additionally, it features a wide Gate-Source Breakdown Voltage that contributes to its high stability and reliability. The Gate-Source Capacitance is low and stable, while the Gate-Source Leakage Current is negligible, offering the best switching performance.

The SI4464DY-T1-E3\'s primary benefit for many applications is its ability to completely turn off the current flowing through it, allowing it to act as an electrical switch. When the gate voltage reaches the device\'s threshold voltage, a large amount of current can be passed from the drain to the source. This is because the channel is so thin that electrons can move quickly between the two points, creating a large current flow. The gate voltage is then used to control the voltage across the channel, thus turning the device on and off.

The SI4464DY-T1-E3 is also suitable for power amplifier applications because it features low output resistance, making it well suited for use in power amplifiers. Additionally, it has the ability to handle high current, allowing power distribution needs to be met in a cost-efficient manner. It also features low input capacitance, resulting in high signal transfer efficiency even at high frequencies.

The SI4464DY-T1-E3 is also useful in low voltage battery operated applications because it has a low threshold voltage, allowing for decreased power consumption. Additionally, it can withstand high drain voltages, making it suitable for use in regulated power supplies. It also offers low gate leakage current which helps the device to be used in sensitive circuit designs.

Finally, the SI4464DY-T1-E3 is suitable for RF and low frequency components thanks to its low gate-source capacitance, making it ideal for mixing and switching applications. It is also able to handle high frequency signals and has a low gate-source threshold voltage, which helps to minimize leakage current and minimize noise.

The SI4464DY-T1-E3 is a highly versatile transistors suitable for a variety of applications. With its high stability and reliability, low losses, low drain-source on-state resistance, high current handling capabilities, low input capacitance, low gate leakage current and low gate-source threshold voltage, it is the perfect solution for many of today\'s electronics needs.

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