SI4431BDY-T1-E3

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The SI4431BDY-T1-E3 is a N-Channel enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor). It belongs to the family of single MOSFETs. The product of Vishay Siliconix is intended for high-side load switch applications.

The features of the SI4431BDY-T1-E3 include high minimum on resistance (RDSon) (3.1 Ω typical) in an ultra-small form factor SOIC-8 package, low gate charge (Qg) (5.5 nC max) which ensures fast switching, and an avalanche energy rating (EAS) of up to 8 mJ. Its high-side load switch application field makes this device ideal for battery management, automotive applications, cold-crank applications and power bus switching.

The working principle of this device relies on the creation of an inversion layer in the silicon which behaves like a conductor, allowing electrons to flow. This MOSFET is considered a voltage-controlled device since the thickness of the inversion layer and thus the electrons flowing through can be regulated with an external gate voltage.

When a positive voltage is applied to the gate terminal of the MOSFET, electrons create an inversion layer and the device enters its “on-state”. This offers a low on-state resistance, allowing the current to flow from the drain to the source. When the voltage applied to the gate terminal is brought to zero the inversion layer also collapses and the device enters its “off-state”.

The SI4431BDY-T1-E3 N-Channel MOSFET is characterized for easy parallel connection and high performance. It is optimized for use in space-limited discrete applications and offers improved current handling capabilities over other similar devices. With a thermal resistance of 6.2 K/W and an avalanche current rating of 80A, this device is perfect for cold-cranking and peak current applications.

The SI4431BDY-T1-E3 is an advanced N-Channel MOSFET designed specifically for high-side load switch applications. Its low gate charge, rugged construction and high minimum on resistance (RDSon) make it suitable for automotive and battery management applications. By combining these features with its ultra-small form factor SOIC-8 package, this device provides improved performance in a space-limited environment. It offers excellent current handling capabilities and avalanche energy rating, making it the perfect choice for cold-crank applications and power bus switching.

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