SI4472DY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4472DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4472DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 150V 7.7A 8-SOIC |
More Detail: | N-Channel 150V 7.7A (Tc) 3.1W (Ta), 5.9W (Tc) Surf... |
DataSheet: | SI4472DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 5.9W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1735pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The SI4472DY-T1-GE3 is a N-Channel Enhancement Mode Field Effect Transistor (FET), specialized for applications in power switch circuits. It is designed using the advanced MOSFET feature for excellent switching performance and minimal power dissipation. This type of transistor is also well-known for their high voltage and high current capacity. The SI4472DY-T1-GE3 is able to operate in the frequency range of up to 1 GHz and its power dissipation level is 45 watts.
The main use of the SI4472DY-T1-GE3 transistor is power switch circuits, especially those with demanding requirements such as telecom switching systems. It can be used in a wide range of sectors such as automotive, industrial, medical, and consumer. It is suitable for use in applications such as automatic switching for radio transmitters, digital switches for communication systems, power regulators for battery chargers, and power oscillators for power amplifiers.
The working principle of the SI4472DY-T1-GE3 transistor is that it operates by using the conduction of electrons from the gate to the body. The electrons are able to leave the gate and enter the body, which is the substrate, and then to the drain. Once the electrons travel to the drain they make a current loop. This current loop creates an amplification effect, allowing the device to act as a switch.
The SI4472DY-T1-GE3 transistor is controlled by an external voltage, called the gate-source voltage. The external voltage increases or decreases the current flowing through the transistor, which in turn affects the electrical output of the device. This type of transistor is also ideal for applications where high speed switching is required, as it can switch quickly and efficiently.
The SI4472DY-T1-GE3 transistor is extremely reliable and efficient, and therefore it is widely used for power switching applications. The transistor does not generate any heat, resulting in a low power dissipation level and a longer device life. It also has an excellent switching performance and a low on-resistance. This transistor is also highly affordable and can be used to construct small and robust circuits.
In conclusion, the SI4472DY-T1-GE3 transistor is an excellent choice for many power switch applications due to its reliability, efficiency, and cost-effectiveness. Its advanced MOSFET technology gives it high voltage and current capacity, as well as excellent switching performance. This type of transistor is also ideal for use in applications requiring high speed switching, as it can switch quickly and effectively. The low power dissipation level and long device life also makes it an attractive option for many applications.
The specific data is subject to PDF, and the above content is for reference
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