Allicdata Part #: | SI4486EY-T1-E3TR-ND |
Manufacturer Part#: |
SI4486EY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.4A 8-SOIC |
More Detail: | N-Channel 100V 5.4A (Ta) 1.8W (Ta) Surface Mount 8... |
DataSheet: | SI4486EY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA (Min) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4486EY-T1-E3 is a type of field-effect transistors (FETs). These transistors are designed specifically to control current in integrated circuits. FETs control current through the application of an electric field, rather than using a base-emitter junction like a bistable switch. As such, FETs are commonly used in computer circuits and electronic components, as well as in consumer electronics products.
The SI4486EY-T1-E3 is a single-channel N-channel enhancement-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This FET has a drain-to-source blocking voltage of 600V with a drain current of 4A. It also features double gate oxide layers to help reduce resistance. This FET is housed in a TO-220 package, making it easier to mount on a printed circuit board.
The working principle behind FETs is based on a 3-terminal layout. A drain, a source and a gate. A voltage is applied between the drain and source, and depending on the voltage applied to the gate, a channel forms and current passing through this channel. The higher the gate voltage, more current can pass through the channel. This is known as voltage-controlled current. The SI4486EY-T1-E3 is equipped with an on-resistance tolerance of ±10%, making it extremely efficient in regulating current.
The SI4486EY-T1-E3 is commonly used in applications such as power supply systems, audio amplifiers, RF drivers and cellular base stations. Its superior drain-source blocking capabilities make it a top choice for high-power and medium-power applications. Additionally, its double gate oxide layers are perfect for reducing resistance and optimizing the circuit performance. It can also be used in switch-mode power supply (SMPS) applications, as it offers both low power dissipation and low RDS(ON) values.
Due to its superior performance and reliability, the SI4486EY-T1-E3 has become one of the most sought after FETs in the market. With its Top-Quality features, such as its medium voltage, low on-resistance, reverse avalanche and ECOPACK® sustainability compliance, the SI4486EY-T1-E3 is a reliable and efficient FET for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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