
Allicdata Part #: | SI6410DQ-T1-E3TR-ND |
Manufacturer Part#: |
SI6410DQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 7.8A 8-TSSOP |
More Detail: | N-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI6410DQ-T1-E3 is a high-performance, low-voltage FET (Field Effect Transistor) with Si (Silicon) gate. It is a single-gate N-channel FET that has been designed for use in many applications, such as general switching, analog switching, and power control. This FET is suitable for operation from -55°C to +125°C and exhibits excellent static and dynamic electrical characteristics. Its small footprint, high power density design, and fast switching times make this device ideal for high-speed digital circuits.
The SI6410DQ-T1-E3 understands four operating modes: cut-off, linear, saturation, and ohmic. In cut off mode, the FET acts like an open switch, and no current flows through it. In linear mode, the FET remains in a steady-state and supplies a constant voltage; in saturation mode, the FET acts like a closed switch and current is allowed to flow through it. Finally, in ohmic mode, the FET behaves like a linear resistor. By varying the applied voltage, it acts as a variable resistor.
The SI6410DQ-T1-E3 can be used in many applications, from regulating power in large motors, to actuating relays in industrial control systems. This device can also be used as a switch in low-power battery-powered systems. It can be used in pulse-width modulation (PWM) circuits, which are essential for switching on and off oscillators, motors, and other circuits where a dynamic voltage is needed. In addition, it can be used as a driver for LED circuits, allowing it to control the brightness of LED light. Finally, SI6410DQ-T1-E3 can be used as the main switch in high-speed logic circuits, ensuring a rapid and accurate transition between logic states.
The SI6410DQ-T1-E3 has excellent thermal performance and it can be operated at higher temperatures, up to +175°C in some cases. As it is a single-gate FET, it can easily be connected in many configurations, such as parallel or series, allowing it to handle larger currents than a 3-pin FET. This makes it the ideal choice for applications that require both high power and simple circuitry.
The SI6410DQ-T1-E3 is a highly reliable and durable transistor, capable of providing years of reliable performance in a variety of applications. Its small size and fast switching times provide an ideal combination for high-speed applications and enable system designers to develop efficient power control systems for maximum efficiency.
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