SI6463BDQ-T1-GE3

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The SI6463BDQ-T1-GE3 is a 60V single N-Channel MOSFET housed in the small and thermally efficient DFN package. Built on an industry-leading ultra-rugged silicon technology and featuring an advanced low-resistance cell design, it offers excellent RDS(on) x Qg and gate charge performance, making it ideal for switching power supply and other power switching applications. It is also well suited for high-performance designs in audio and radio frequency (RF) amplifiers.

The main application fields of the SI6463BDQ-T1-GE3 are power switching applications such as Light Emitting Diode (LED) controllers, DC-DC converters, linear regulators, and switching power supplies. It can also be used in high-performance audio and radio frequency (RF) amplifier designs. Additionally, its low RDS(on) x Qg and gate charge performance makes the device well suited for energy-efficient automotive and industrial applications, where it can be used for direct-drive motor controls and load switching.

The working principle of the SI6463BDQ-T1-GE3 is based on the fact that a transistor is able to control a large amount of current with a small input signal. This ability is provided by the voltage amplification factor, or beta, of a transistor which is the ratio of the change in collector current to the change in base current. In the case of the SI6463BDQ-T1-GE3, the voltage amplification factor of the device is higher than that of an ordinary silicon transistor, allowing the device to handle greater amounts of current with the same input signal.

The SI6463BDQ-T1-GE3 features a low RDS(on) x Qg and gate charge performance, making it ideal for switching power supply applications. It is also capable of withstanding higher voltages, making it suitable for a wide range of applications in automotive, industrial and consumer markets. Additionally, the device is able to withstand higher environmental temperatures and is capable of operating within a wide temperature range. This makes it well suited for use in demanding applications such as motor controls, load switching and power supplies.

In conclusion, the SI6463BDQ-T1-GE3 is a 60V single N-Channel MOSFET that is well suited for use in power switching, audio and RF amplifier designs. Its low RDS(on) x Qg and gate charge performance make it an ideal choice for switching power supply applications. Additionally, its high voltage withstand capability and wide temperature range make it suitable for use in automotive, industrial and consumer markets. It is a reliable device that is able to provide reliable performance even in the most demanding applications.

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