Vgs(th) (Max) @ Id:	800mV @ 400µA
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.05W (Ta)
FET Feature:	--
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 9.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	8.2A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SI6423DQ-T1-GE3 is a power Field Effect Transistor (FET) device manufactured by Vishay Intertechnology. It has a high voltage gate-source blocking voltage, which is typically 1200V, a medium avalanche current capability, and is suitable for applications such as switching and power supply applications. The power FET device is designed for use in medium and low power supplies for applications such as powering LED lighting, heating and cooling systems, motor control, and more. In this article, we will discuss the application field and working principle of the SI6423DQ-T1-GE3.

Application Field

The SI6423DQ-T1-GE3 is a low-voltage, high-performance power FET that can be used for a wide range of power supply applications. In LED lighting, the SI6423DQ-T1-GE3 can be used to regulate the current to the LED and ensure that the LEDs are operating at the right voltage and current. Additionally, the SI6423DQ-T1-GE3 can be used in power supplies for microwave ovens and other home appliances. It can also be used in industrial and medical equipment such as programmable logic controllers (PLCs) and power supplies for medical equipment. The SI6423DQ-T1-GE3 is an efficient power FET device and can be used in power supply applications that require a high switching frequency. It can also be used in applications that require the power FET to dissipate heat quickly, such as high-power motor control applications. The SI6423DQ-T1-GE3 is also suitable for applications where the FET needs to be protected from excessive power consumption.

Working Principle

The SI6423DQ-T1-GE3 works on the principle of the FET, in which an electric charge is applied between the gate and the source of the FET to modify the width of the channel between the source and the drain. This electric charge is referred to as the gate-source voltage.When a small voltage is applied between the gate and source, the gate-source voltage of the FET is increased and the width of the channel between the source and the drain is narrowed. This narrowing of the channel results in a decrease in the drain current, as the electrons have a smaller area to pass through. Conversely, when a larger voltage is applied between the gate and source, the gate-source voltage of the FET is decreased and the width of the channel between the source and the drain is widened. This widening of the channel results in an increased drain current, as the electrons have a larger area to pass through. This increase or decrease in the current of the FET is used in power supply applications such as LED lighting, motor control, and more. In LED lighting, for example, the drain current of the FET can be used to regulate the amount of current going to the LED, ensuring that the LED is operating at the right voltage and current. The FET can also be used in a power supply application to regulate the voltage and current going through the power supply.

Conclusion

The SI6423DQ-T1-GE3 is a power FET device manufactured by Vishay Intertechnology. It has a high voltage gate-source blocking voltage and a medium avalanche current capability, suitable for a wide range of power supply applications, such as switching, power control, and more. This article has discussed the application field and working principle of the SI6423DQ-T1-GE3.

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