SI6410DQ-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI6410DQ-T1-GE3 is a Single Common Gate Field Effect Transistor (FET) created by Vishay Semiconductor. This FET is a Switch Mode Power Supply (SMPS) transistor featuring a common-gate transfomrer driver IC architecture that has been specifically designed for maximum performance in both high- and low-side applications. This FET has a breakdown voltage of 200V, a drain-source on-state resistance of 190mΩ, and a total gate charge of 40nC. It is also capable of handling peak currents of up to 20A.

The main application field for the SI6410DQ-T1-GE3 FET is in switch-mode power supplies, such as those used in renewable energy applications. This includes solar panels and inverters, as well as in light and electronic ballasts. This FET can also be used in applications such as motor speed controllers, motor control switches, motor drivers, and driver circuits.

The working principle of the SI6410DQ-T1-GE3 FET is based on a common-gate transformer driver IC architecture. This type of architecture is designed to reduce switching time, reduce power loss, and improve efficiency. This FET operates by using a voltage source that is applied across the gate of the FET, which causes the FET to become either in a saturation or in an off-state. When in an off-state, the drain-source voltage drops to zero, allowing the circuit to switch out of the FET and into an alternate path. This architecture also allows for low-side switching, which eliminates the need for a separate high-side driver, thereby reducing system cost and size.

In conclusion, the SI6410DQ-T1-GE3 FET is a switch mode power supply transistor with a common-gate transformer driver IC architecture. It is primarily used for applications involving renewable energy sources, such as solar panels and inverters, as well as for motor speed controllers, motor control switches, motor drivers, and driver circuits. Its working principle is based on a common-gate transformer driver IC architecture that is designed to reduce switching time, reduce power loss, and improve efficiency.

The specific data is subject to PDF, and the above content is for reference