SI6473DQ-T1-GE3

Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.08W (Ta)
FET Feature:	--
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	12.5 mOhm @ 9.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The SI6473DQ-T1-GE3 transistor is a single-channel MOSFET used in a variety of applications. It is well-suited for digital and analog switching in mixed-signal applications. It has an impressive package size and a low on-resistance rating, making it ideal for power designs and switching applications. This article will discuss the application fields and working principle of the SI6473DQ-T1-GE3.

Application Fields

The SI6473DQ-T1-GE3 is used in a variety of applications. It has an impressive package size which makes it well-suited for applications that have space constraints. It is ideal for power designs, such as servers and storage devices, due to its low on-resistance rating. It is also well-suited for switching applications, especially in mixed-signal designs.The SI6473DQ-T1-GE3 is well-suited for industrial applications such as robotics, power supplies and motor controllers. It is also suitable for consumer applications, including electronic toys and battery-powered devices. Additionally, it is suitable for automotive and aerospace applications, such as brake and throttle control systems.

Working Principle

The SI6473DQ-T1-GE3 is a MOSFET which stands for metal-oxide-semiconductor field-effect transistor. The transistor works by allowing a small amount of current to pass through it when a voltage is applied to its gate. The amount of current that can pass through depends on the gate voltage. When the gate voltage is high, it allows more current to pass through than when the gate voltage is low.The SI6473DQ-T1-GE3 has a low on-resistance rating, meaning it has a low resistance when it is turned on. This makes it well-suited for power designs and switching applications, as it can pass large amounts of current with little power loss. The transistor also has a maximum drain-source voltage rating of 20V, making it suitable for a variety of voltage requirements.

Conclusion

The SI6473DQ-T1-GE3 is a single-channel MOSFET which is well-suited for digital and analog switching in mixed-signal designs. It has a low on-resistance rating which makes it ideal for power designs and switching applications. Additionally, the SI6473DQ-T1-GE3 is suitable for industrial, automotive, and aerospace applications due to its impressive package size and maximum drain-source voltage rating. The transistor works by allowing a small amount of current to pass through when a voltage is applied to its gate.

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