SI6467BDQ-T1-E3

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The SI6467BDQ-T1-E3 is a single, high voltage, enhancement mode, N-channel MOSFET. It is specifically designed to survive high energy application such as telecom switching or other industrial high voltage, high energy switch application. This device is capable of providing high performance to meet the requirements of such applications.

The SI6467BDQ-T1-E3 has a wide range of features and applications, making it an ideal choice for high voltage, high-power applications. The device has an on-resistance of 3.7 ohm, a low Ron slope of 0.46 ohm, an extended temperature range of 5°C to +175°C, and a typical gate charge of 196 nC. Additionally, the device can support a drain voltage of up to 500V, and can provide up to 13A of continuous drain current.

The SI6467BDQ-T1-E3 is a high voltage, high power MOSFET, and is suitable for switching applications. The device has a low Ron slope and a maximum drain-source on-resistance of 3.7 ohm, making it suitable for use in high current switching applications. The device can also be used in high voltage protection circuits and as a driver for DC motor control applications. Moreover, the device is capable of withstanding energy levels up to 7.8J per pulse, which makes it suitable for use in applications such as telecom switching systems where high energy levels are required.

The working principle of the SI6467BDQ-T1-E3 is based on the property of an N-channel MOSFET. The N-channel MOSFET, like other FETs, is based on the principle of carrier mobility modulation. A voltage applied between the drain and source terminals will alter the mobility of carriers in the channel, thus controlling the current. When a voltage is applied between the gate and source terminals, it will alter the potential between the source and drain terminals. This, in turn, will regulate the amount of current flowing through the device. The amount of current flowing through the device depends on the applied gate voltage and the resistance between the source and drain terminals.

In addition to its electrical properties, the SI6467BDQ-T1-E3 also has a number of mechanical characteristics. The device has a standard dual flat no-lead (DFN) package, making it easier to use in high density applications. It also has two mounting holes, allowing it to be mounted securely to a PCB. The device has a small footprint, allowing it to be used in tight spaces. Furthermore, the device is RoHS compliant and is designed to meet the highest safety standards.

In summary, the SI6467BDQ-T1-E3 is a single, high voltage, enhancement mode, N-channel MOSFET. It is capable of surviving in high energy applications such as telecom switching or other industrial high voltage, high energy switch application. The device has an on-resistance of 3.7 ohm, a low Ron slope of 0.46 ohm, and can support a drain voltage of up to 500V. It can also provide up to 13A of continuous drain current. The device has a wide range of features and applications, and has a standard dual flat no-lead (DFN) package with two mounting holes, making it easier to use in high density applications. The working principle of the device is based on the principle of carrier mobility modulation, and it is suitable for high current switching applications, high voltage protection circuits, and DC motor control applications. Furthermore, the device is RoHS compliant and is designed to meet the highest safety standards.

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