SI6423DQ-T1-E3

Vgs(th) (Max) @ Id:	800mV @ 400µA
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.05W (Ta)
FET Feature:	--
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 9.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	8.2A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI6423DQ-T1-E3 is a N-Channel Enhancement Mode Power MOSFET that belongs to the single type of FETs and MOSFETs. By combining advanced silicon process and robust packaging technologies, this device is optimized for low RDS(ON) and excellent switching performance which makes it an ideal choice for designers of electronic systems. It has a very lower gate charge that reduces the switching time and, at the same time, provides low gate-source leakage current which extends its battery life.The device is incorporated in applications that require good RDS(ON) and excellent switching performance. It is mostly used in load switches, high-efficiency DC/DC converters, and power management monitoring in communication systems and portable systems. This particular device, SI6423DQ-T1-E3, has a drain-source voltage of 55 V, RDS(ON) of 3.9 mΩ and fast switching times which makes it suitable for a variety of applications.The working of the SI6423DQ-T1-E3 MOSFET is based on the MOSFET mechanism which is commonly used for power switching applications. In this type of device, an electric field is created between the source and the drain by the application of a gate voltage. The gate-source voltage causes an inversion of the channel between the source and the drain. This creates a channel between the source and drain which allows the flow of current between the source and the drain. This mechanism enables the control of current via the application of a gate-source voltage.The source of the SI6423DQ-T1-E3 is connected to the negative side of the power supply and the drain is connected to the load. When the gate voltage is applied, the channel is formed between the source and the drain which allows the current to flow from the source to the drain. When the gate voltage is decreased, the channel between the source and drain is reversed, reducing the current flow from the source to the drain. This mechanism allows for excellent control over the current.The SI6423DQ-T1-E3 also has an impressive power handling capacity. It is capable of handling a drain-source voltage of 55 V, current limit of 5.98 A and total power dissipation of 600 W. This power handling capacity and low RDS(ON) make it ideal for switching high voltages and large currents.The SI6423DQ-T1-E3 is also optimized for fast switching speeds with a switching time of 4 nanoseconds. This is achieved through its low gate charge which reduces the amount of time required for the switch between the source and drain. It also has a low gate-source leakage current which helps extend its battery life.To sum up, the SI6423DQ-T1-E3 is a N-Channel Enhancement Mode Power MOSFET that is suitable for a variety of applications such as load switches, high-efficiency DC/DC converters, and power management monitoring in communication systems and portable systems. It has a 55 V drain-source voltage, 3.9 mΩ RDS(ON), 5.98 A current limit, 600 W total power dissipation, and 4 nanoseconds switching time that enables it to be used for switching high voltages and large currents. Its low gate charge, low gate-source leakage current, and impressive power handling capacity makes it an ideal choice for designers of electronic systems.

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