Allicdata Part #: | SI6415DQ-T1-GE3TR-ND |
Manufacturer Part#: |
SI6415DQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 6.5A 8-TSSOP |
More Detail: | P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP |
DataSheet: | SI6415DQ-T1-GE3 Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI6415DQ-T1-GE3 is a high-speed transistor product, which belongs to a type of field-effect transistor. This type of transistor is also known as an insulated gate field-effect transistor or FET, which is a semiconductor device that uses the effect of electric field to control the flow of current through it. As the best-suited transistor in the industrial automation and automotive fields, SI6415DQ-T1-GE3 provide high-speed switching performance, long operating life and stable operation.
What is a FET?
A FET or Field Effect Transistor is a three-terminal semiconductor device that has one or more depletion or enhancement regions of n-type or p-type semiconductor material that are used to control the flow of current through it. The three terminals of the FET are source, gate, and drain. When a voltage is applied to the gate, it changes the barrier between the source and the drain, allowing current to flow between them. This effect is called transconductance.
How does SI6415DQ-T1-GE3 Work?
As for the SI6415DQ-T1-GE3, it uses a unique type of FET. The device has a built-in Schottky diode which allows current to only flow in one direction—from the drain to the source. This reduces the problem of reverse current and makes SI6415DQ-T1-GE3 more efficient than other FETs. With the help of a high-speed gate drive circuit, the SI6415DQ-T1-GE3 can switch within a few nanoseconds, allowing it to operate at higher frequencies. It also reduces the power dissipation of the switching circuit, making this FET ideal for high-speed applications.
Application Field of SI6415DQ-T1-GE3
The unique performance of SI6415DQ-T1-GE3 makes it the best-suited FET for applications such as industrial automation, automotive systems, and LED lighting. The fast switching ensures that the load can be quickly driven into turn-on or turn-off states. This is especially useful in automotive systems, as it improves fuel efficiency and reduces emissions. The device can also be used in LED lighting, as it helps reduce power dissipation and increases the lifetime of the light source.
Conclusion
Overall, the SI6415DQ-T1-GE3 is a high-speed FET ideally suited for applications in industrial automation and automotive systems. Its built-in Schottky diode ensures high speed switching, low power dissipation and long operating life. It is therefore the best-suited transistor for these applications.
The specific data is subject to PDF, and the above content is for reference
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