
Allicdata Part #: | SI6465DQ-T1-E3-ND |
Manufacturer Part#: |
SI6465DQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 8.8A 8TSSOP |
More Detail: | P-Channel 8V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 8.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI6465DQ-T1-E3 is a dual 1.2W N-channel smart power MOSFET (Metal-oxide-semiconductor field-effect transistor) manufactured by ROHM, which is widely used in industrial and automotive applications. This article will discuss its application field and working principle.
Application Field
The SI6465DQ-T1-E3 is a low-cost, low-voltage solution that offers high-side and low-side on-board control and protection.It is widely used in automotive applications such as electronic switching, current sensing, ground-distribution and power supply systems. It is also used in industrial electronics and power management devices such as DC-DC converters, voltage regulators and relay circuits. Furthermore, it can also be found in several monitoring systems, especially those involved in power safety.
As well as being used in automotive and industrial applications, the SI6465DQ-T1-E3 can also be used in electrical equipment, solar energy systems and panel-mounted displays. It is also a good choice for high-current applications that require low EMI noise emissions, such as automotive ECUs, LCD televisions and other industrial applications.
Working Principle
The SI6465DQ-T1-E3 is a N-channel MOSFET which consists of a gate, a drain, and a source. It is used to control the flow of current from the source to the drain by means of a gate signal. When a negative voltage is applied to the gate, the channel is opened and current can flow from source to drain. When the gate voltage is 0 V, the channel is closed and no current can flow.
The SI6465DQ-T1-E3 has a low on-resistance of 260 mΩ, which means it is able to handle large currents without much voltage drop-off. It also features a built-in ‘Smart Diode’ function which helps to reduce switching losses and improves the efficiency of the circuit. The SI6465DQ-T1-E3 is also protected against over-voltage, over-current and thermal overload.
The SI6465DQ-T1-E3 is designed to provide superior electrical characteristics, robustness and reliability. It is suitable for a wide range of applications including automotive and industrial usage, making it a great choice for designers looking for a versatile and reliable MOSFET device.
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