SI6435ADQ-T1-E3

Vgs(th) (Max) @ Id:	1V @ 250µA (Min)
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.05W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	30 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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<p>The SI6435ADQ-T1-E3 is a type of semiconductor component called a metal-oxide-semiconductor field-effect transistor (MOSFET) that deals with switching and amplification of signals. It is one type of MOSFET, known as a single-gate n-channel MOSFET, meaning that it has an n-type (negative) source-drain channel that can be turned on or off using the single gate. This type of device is widely used for various applications due to its particularly low power consumption compared with other types of transistors.</p><p>When it comes to application fields, the SI6435ADQ-T1-E3 is most commonly used in digital signal processing, audio amplifiers, and other such high-frequency applications. It is also often used to drive power MOSFETs, as its low gate-charge makes it ideal for switching larger loads of current. This particular component is well suited for automotive as well as home entertainment applications due to its combination of low on-resistance and relatively low gate charge.</p><p>The working principle of the SI6435ADQ-T1-E3 can be explained in terms of a “gate-source voltage” (GSV). This is a voltage applied between the gate (input) and source (output) of the device, which causes current to flow through the body-source junction. When the GSV is increased, the device is said to be “on”, and when it is reverse biased (i.e. a voltage applied in an opposite direction to the flow of current), the device is said to be “off”. This constant switching between “on” and “off” states is what allows the SI6435ADQ-T1-E3 to be used for such a wide variety of applications.</p><p>The SI6435ADQ-T1-E3 is a versatile component that can be used for a wide range of purposes. It is commonly used for digital signal processing and audio amplifiers, as well as in automotive and home entertainment applications. Its low power consumption and combination of low on-resistance and low gate charge make it an ideal choice for switching large loads of current. Its working principle revolves around the “gate-source voltage” (GSV): the device is said to be “on” when the GSV applied between the gate and source is increased, and “off” when reverse biased.</p>

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