SI6469DQ-T1-GE3

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The SI6469DQ-T1-GE3 is a power transistor from Vishay Semiconductors. It is a high-voltage, high-current, fast switching N-Channel MOSFET. This particular model is offered in a DPAK / TO-262 package and has an on-state resistance of 0.0043 Ohms. With the ability to handle up to 10A of continuous current, it is designed to be used as a load switch, or to provide power output in various power management applications.The SI6469DQ-T1-GE3 is designed to handle loads up to 50V with a maximum drain-source breakdown voltage of 60V. It is also designed to handle transient voltage spikes of up to 75V ensuring the MOSFET is robust under extreme conditions. It is constructed with a thin gate oxide layer which allows it to have a fast switching speed of 25 nanoseconds and this is what makes it ideal for power management applications.At the heart of any MOSFET is the ability to switch a load between an on state and an off state. This is made possible by the use of a gate. The gate acts as a switch that controls the flow of current between the drain and source. When the gate voltage is below the threshold voltage, the MOSFET is in its off-state and the current flow is blocked. When the gate voltage is above the threshold voltage, it will turn the MOSFET on, allowing current to flow between the drain and source. The gate voltage needs to be precisely controlled as an overvoltage can cause permanent damage to the MOSFET.Another feature of the SI6469DQ-T1-GE3 is that it has an ESD protection rating of 6KV Human Body Model and 3KV Machine Model. This is important when used in environments where static electricity can cause damage. It also has an integral built-in body diode which provides protection against reverse polarity voltages.One of the most important applications of the SI6469DQ-T1-GE3 is in power management applications. It can be used as a load switch to turn devices on and off, depending on the control signal received by the gate. It can also be used for power MOSFET switching and for providing power output for DC-DC converters, switching regulators, and inverters.In summary, the SI6469DQ-T1-GE3 is a high-voltage, high-current, fast switching N-Channel MOSFET designed to handle loads up to 50V with a maximum drain-source breakdown voltage of 60V. It is designed with a thin gate oxide layer which allows it to have a fast switching speed of 25 nanoseconds. It also has an ESD protection rating of 6KV Human Body Model and 3KV Machine Model. This makes it ideal for power management applications such as load switching, power MOSFET switching, and providing power output for DC-DC converters, switching regulators, and inverters.

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