Allicdata Part #: | SI6466ADQ-T1-E3-ND |
Manufacturer Part#: |
SI6466ADQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 6.8A 8TSSOP |
More Detail: | N-Channel 20V 6.8A (Ta) 1.05W (Ta) Surface Mount 8... |
DataSheet: | SI6466ADQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.05W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 8.1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI6466ADQ-T1-E3 is a single N-channel TrenchFET® power Field Effect Transistor (FET) from Vishay Siliconix. The components are designed for providing superior performance in a wide range of applications for industrial, computing, automotive, and consumer markets.
The SI6466ADQ-T1-E3 is designed to handle through loads up to 10A and offer low on-resistance of 2.8 mΩ at 4.5 V. The device has a low gate charge, maximum of 15 nC, which helps in reducing switching loss. It also has a Fast Internal Gate Resistance (Rg) of 0.55 Ω, which helps in reducing conduction loss and increasing the efficiency of the system.
The operating temperature range of the SI6466ADQ-T1-E3 is from -55 to 150 °C, making it suitable for high temperature applications. The transistor is available in a small surface mount package, making it suitable for use in space constrained applications. The SI6466ADQ-T1-E3 has excellent switching performance and thermal characteristics, making it an ideal choice for power management in modern power electronics.
The SI6466ADQ-T1-E3 is an enhancement mode, N-channel power MOSFET designed to have a low on-resistance and fast switching times. It uses a high voltage trench gate structure to minimize gate charge. The SI6466ADQ-T1-E3 is able to switch loads up to 10A with excellent thermal characteristics and low on-resistance.
The SI6466ADQ-T1-E3 has excellent operational characteristics, making it suitable for various power management design tasks. It can be used in applications such as motor control and power converter applications. In these applications, it is used to turn power on and off quickly and efficiently. It can also be used in battery charging applications for providing longer battery life.
The SI6466ADQ-T1-E3 is designed to provide high efficiency, low on-resistance, and fast switching times. It is capable of providing superior performance compared to other MOSFETs in a wide range of applications. The device is available in a compact package, making it suitable for use in space constrained applications. It also has excellent thermal characteristics and fast switching performance, making it ideal for use in power management.
The specific data is subject to PDF, and the above content is for reference
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