SI6469DQ-T1-E3 Allicdata Electronics
Allicdata Part #:

SI6469DQ-T1-E3-ND

Manufacturer Part#:

SI6469DQ-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 8V 8TSSOP
More Detail: P-Channel 8V 1.5W (Ta) Surface Mount 8-TSSOP
DataSheet: SI6469DQ-T1-E3 datasheetSI6469DQ-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A SI6469DQ-T1-E3 transistor is a type of field effect transistor, also known as a FET, which is specifically a metal-oxide-semiconductor FET, or MOSFET. This type of transistor is used as an amplifier and is commonly used in electronics projects such as amplifiers, radio transmitter circuits, and power supplies. The SI6469DQ-T1-E3 is a P-channel enhancement-mode MOSFET, meaning it can amplify signals, or increase the voltage or current at their output terminals when an appropriate signal is applied to its input terminals.

The SI6469DQ-T1-E3 is designed primarily to be used in automotive applications, as it is designed to withstand higher temperatures than other MOSFETs. Additionally, it has high on-resistance and low off-resistance for more efficient use of electrical power. The SI6469DQ-T1-E3 can be used for applications ranging from signal amplification to power supply regulation. It can be used for switching high currents, up to 8 A maximum.

The working principle of the SI6469DQ-T1-E3 is very simple. It uses an electric field and the charge of two metal oxide layers to modify an electric signal. One layer is positive, or p-type, and the other layer is negative, or n-type. When an electric signal is applied between the two layers, the negative layer repels the positive charge, and the positive layer repels the negative charge. This creates a current in the transistor, allowing current to flow between the two layers, thus amplifying the signal. This type of transistor is used in electronics projects to amplify signals, and is also used in power supply regulation.

The SI6469DQ-T1-E3 is a great option for those looking for a powerful, reliable, and efficient transistor. It is easy to use and can be used for a variety of applications, ranging from signal amplification to power supply regulation. For those working on automotive projects, this transistor is an excellent choice, as it is designed to operate in high temperatures. Additionally, its high on-resistance and low off-resistance make it perfect for efficient use of electrical power, making it a great choice for those looking to maximize their use of electrical power.

The specific data is subject to PDF, and the above content is for reference

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