SI6463BDQ-T1-E3 Allicdata Electronics
Allicdata Part #:

SI6463BDQ-T1-E3CT-ND

Manufacturer Part#:

SI6463BDQ-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 6.2A 8-TSSOP
More Detail: P-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8...
DataSheet: SI6463BDQ-T1-E3 datasheetSI6463BDQ-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 800mV @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.05W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The SI6463BDQ-T1-E3 is widely used in transistor technology, and it falls into the category of Field-Effect Transistors (FETs), MOSFETs, and Single. This type of transistor holds great promise for applications in telecommunications and consumer electronics, among others.

The SI6463BDQ-T1-E3 is a voltage-controlled high-performance, low-power MOSFET transistor. The device is equipped with a very large operating temperature range, from -55℃ to 150℃, making it even suitable for a wide range of applications. SI6463BDQ-T1-E3 has many important characteristics such as low gate charge, high-current carrying capability, and good immunity to latch-up.

The working principle of a field-effect transistor such as the SI6463BDQ-T1-E3 is that it operates on the principle of a capacitance in which the charge on an insulating Gate is modified to alter the characteristics of the channel between the drain and the source. It works on the principle of a depletion-mode FET, which means that the channel is off when the Gate voltage is 0. When a voltage is applied to the Gate, the channel is turned on and conduction between Source and Drain begins.

The SI6463BDQ-T1-E3 is specifically designed for use in high frequency applications and are typically used for switching and amplification needs. It is particularly suitable for switching the power supply on and off, as well as for controlling switching and amplifier circuits which require low on-state resistance (RDS(ON)).

The SI6463BDQ-T1-E3 is commonly used in a variety of applications such as power distribution, motor control, and load/inverter trough laws for industrial control and lighting applications. Its wide operating temperature range and ability to handle very large amounts of current makes it a popular choice for these types of applications.

The SI6463BDQ-T1-E3 is a versatile device with many features and characteristics that make it highly suitable for use in a variety of applications. From power distribution and motor control to load/inverter trough laws, this is a powerful device that can provide reliable and efficient operation in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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