SI7946DP-T1-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Base Part Number:	SI7946
Supplier Device Package:	PowerPAK® SO-8 Dual
Package / Case:	PowerPAK® SO-8 Dual
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.4W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	150 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C:	2.1A
Drain to Source Voltage (Vdss):	150V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

SI7946DP-T1-GE3 is a dual-gate field effect transistor (FET) array manufactured by NXP Semiconductors. It is designed for an array of low-noise amplifier (LNA) applications, such as in radio receivers and satellite TV receivers. This device combines a two-channel low-noise amplifier with a predefined level of gain, which ensures that the required signal can be monitored at all times. The device is also highly stable over temperature and frequency, making it suitable for use in a variety of applications that require reliable, low-frequency performance. In addition, the device has an integrated noise-attenuating resistor, as well as a built-in temperature sensor to help maintain consistent operating parameters.

Application field

The SI7946DP-T1-GE3 is designed for applications requiring low noise amplification and accurate monitoring at low frequencies. For example, in the field of mobile communications, this device is ideal for use in radio receivers and satellite TV receivers. This device can also be used in digital communication systems, where it can monitor and amplify frequencies up to 2 GHz. Additionally, it can be used in low-noise applications such as medical radiography and data acquisition systems.

Working principles

The SI7946DP-T1-GE3 is a dual-gate field effect transistor array that combines two low-noise amplifiers. These amplifiers are designed to convert low-frequency signals into high-frequency signals. The device operates on an input voltage between 3.3V to 5V, and its output is a differential amplifier capable of differing gains. This device also includes a pair of dual G•MOSFET transistors and standard MOSFET transistors, which are connected in series with the input voltage. The two output channels are connected in parallel with the G•MOSFETs and the standard MOSFETs via a load resistor.The two G•MOSFETs act as variable gain elements in the amplifier, allowing for the selection of different gains. This is done by adjusting the gate voltage of the G•MOSFETs. The standard MOSFETs act as the power supply’s voltage source and the load resistor acts as an input impedance matching element. The device also contains an internal temperature sensor for temperature control and a temperature attenuating resistor for increased noise reduction.

Conclusion

The SI7946DP-T1-GE3 is a dual-gate field effect transistor array that is designed to provide low-noise amplification and reliable frequency monitoring. The device includes a pair of dual G•MOSFETs and standard MOSFETs, as well as a load resistor, a temperature sensor, and a temperature attenuating resistor. This device is ideal for use in a variety of applications that require low-noise performance and accurate monitoring of low-frequency signals, such as radio receivers and satellite TV receivers.

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