SI7923DN-T1-GE3

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Transistors - FETs, MOSFETs - Arrays

The SI7923DN-T1-GE3 is a Multi-source, Low Voltage MOSFET Array device with 93mA typical drain current and operating at a maximum drain-source voltage rating of -30V. This device is a three N-channel MOSFETs in the same package and is built with a high-current level N-channel and two medium-current level N-channel in integrated package. It provides an ultra-low on resistance and high current carrying capability of the source-drain connection.

Application field

The SI7923DN-T1-GE3 provides a wide range of feature for low voltage applications. It is ideal for many power management applications, such as LED lighting, Telecom and Networking, Motor Drive, Automotive and Industrial applications. Some typical applications include switch mode power supplies, low voltage battery supplies, power supply sequencing, power switching between two power sources, etc.

Working principle

The SI7923DN-T1-GE3 is composed of three N-channel MOSFETs in the same package. The first MOSFET is a high-current level N-channel MOSFET, and the other two are medium-current level N-channel MOSFETs. All the MOSFETs have their own gate which is driven by the control signals from the user\'s circuit. A negative supply is connected to the drain pin of the device. When the control signal turns ON, the gate of the MOSFETs connected to the supply voltage is pulled up and the drain voltage on the MOSFETs is reduced. This allows current to flow from the source to the drain, thus the device is in ON state. When the control signal turns OFF, the gate of the MOSFETs connected to the supply voltage is pulled down and the drain voltage on the MOSFETs is increased, this reduces current flow, thus the device is in OFF state.

The SI7923DN-T1-GE3 is a three N-channel MOSFET Array, providing convenience and reliability to device user. The device is designed to operate with a maximum drain-source voltage rating of -30V. This device is designed to offer high-current level switch applications, with a low on resistance and high current carrying capability.

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