SI7956DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7956DP-T1-GE3TR-ND

Manufacturer Part#:

SI7956DP-T1-GE3

Price: $ 1.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
More Detail: Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Sur...
DataSheet: SI7956DP-T1-GE3 datasheetSI7956DP-T1-GE3 Datasheet/PDF
Quantity: 15000
1 +: $ 1.20000
10 +: $ 1.16400
100 +: $ 1.14000
1000 +: $ 1.11600
10000 +: $ 1.08000
Stock 15000Can Ship Immediately
$ 1.2
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SI7956
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 150V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7956DP-T1-GE3 is a high-speed power MOSFET array device that is used in a variety of applications. This device has two independent, high current, parallel n-channel MOSFET sections, which makes it suitable for high power applications up to 20A continuous. This device is capable of providing up to 900V breakdown voltage and features a low on-state resistance, making it ideal for power switching applications.

The application fields for the SI7956DP-T1-GE3 include power management, DC/DC converters, motor control, audio/video systems, and medical equipment. It is also suitable for driving power loads such as motors, heating elements, and LED arrays. The device has two independent input sections which can be connected in parallel to increase current capability. This makes it possible to drive large loads with low levels of power consumption.

The working principle of the SI7956DP-T1-GE3 device is based on the operation of MOSFETs, which are transistor-like devices that use voltage rather than current to control their conduction. The device consists of a control gate, an output drain, and a source. When the control gate is energized, the MOSFET is turned on, allowing current to flow from the drain to the source. When the control gate is de-energized, the MOSFET is turned off, preventing current from flowing from the drain to the source. The device can be used as a switch to control the current flow to a load.

The SI7956DP-T1-GE3 is highly durable, with an estimated lifetime of up to 500 million switching cycles. It is also highly reliable, with an MTTF rating of over a million hours. The device is also highly efficient, with an on-state resistance of only 200 mΩ, which means it can dissipate less power while driving loads.

In summary, the SI7956DP-T1-GE3 is a high-speed power MOSFET array device that is used in a variety of applications. The device has two independent, high current, parallel n-channel MOSFET sections, making it suitable for high power applications up to 20A continuous. It is highly durable, reliable, and efficient, making it ideal for power switching applications. By controlling the voltage to the control gate, the user can control the current flow to the load, making it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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