
Allicdata Part #: | SI7925DN-T1-GE3-ND |
Manufacturer Part#: |
SI7925DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 12V 4.8A 1212-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 4.8A 1.3W Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 1212-8 Dual |
Supplier Device Package: | PowerPAK® 1212-8 Dual |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI7925DN-T1-GE3 is a transistor array used as an analog signal switch. This type of device is used to control the flow of a signal in an electrical circuit. It operates by controlling the voltage and current flow in the circuit and offers a reliable switching solution. In this way, the SI7925DN-T1-GE3 can be used to control a variety of different applications including audio and video signal switching, modulation, and power control. It is a single-channel transistor array, meaning that it has a single gate, collector, and emitter.The SI7925DN-T1-GE3 has two different operational states. These states are known as OFF and ON, with the OFF state representing when the transistor array is not active, and the ON state representing when the transistor array is active. In the OFF state, the transistor array is turned off and does not conduct electricity through the transistors, meaning that the signal will not flow. In the ON state, the transistor array is turned on, allowing electricity to pass through its transistors and allowing the signal to flow.The SI7925DN-T1-GE3 can be used to switch signals in either a PNP or NPN configuration. With the PNP configuration, the current flows in the opposite direction of the gate, and with an NPN configuration, the current flows in the same direction as the gate. This allows for the selection of signals from either an input or output side of the circuit. By utilizing this transistor array, one can make a reliable and efficient selection of signals from either side of the circuit.The SI7925DN-T1-GE3 has a wide range of applications. It can be used to switch electronic signals for audio and video signals, for modulation, and for power control. It can also be used in high-frequency applications such as radio frequency amplifiers and filters. The SI7925DN-T1-GE3 is also widely used in the automotive industry in applications such as door openers, headlights, radio systems, and rear-view mirror controls.The working principle of the SI7925DN-T1-GE3 is based on the basic principles of transistors. Transistors are composed of three layers: the base, the collector, and the emitter. The base receives a voltage that controls the current passing through the transistor and translates it into an output voltage. The collector is the output terminal, while the emitter is the input terminal.The SI7925DN-T1-GE3 operates in the same manner as other transistors. When a voltage is applied to the base of the transistor, current will flow from the collector to the emitter. The current that flows through the transistor is dependent on the voltage applied to the base and can be altered accordingly. When the voltage applied to the base is above the threshold, the transistor is said to be ‘on’, and when the voltage applied is below the threshold, the transistor is said to be ‘off’. This principle is used in the SI7925DN-T1-GE3 to switch signals from one side to the other.The SI7925DN-T1-GE3 is an invaluable component that is used in a wide range of applications. It is a reliable and efficient way to switch signals and can be used in audio and video signals, modulation, and power control. Its working principle is based on the basic principles of transistors, and its reliability and efficiency make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI7960DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 60V 6.2A PPA... |
SI7997DP-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET 2P-CH 30V 60A PPAK... |
SI7909DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 5.3A 121... |
SI7901EDN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.3A 121... |
SI7964DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 60V 6.1A PPA... |
SI7964DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 60V 6.1A PPA... |
SI7913DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 5A 1212-... |
SI7980DP-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 8A PPAK ... |
SI7911DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.2A 121... |
SI7913DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 5A PPAK ... |
SI7905DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 40V 6A 1212-... |
SI7942DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 100V 3.8A PP... |
SI7900AEDN-T1-E3 | Vishay Silic... | -- | 42000 | MOSFET 2N-CH 20V 6A 1212-... |
SI7923DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 4.3A 121... |
SI7983DP-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 7.7A PPA... |
SI7940DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 12V 7.6A PPA... |
SI7983DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 7.7A PPA... |
SI7904BDN-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET 2N-CH 20V 6A PPAK ... |
SI7909DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 5.3A 121... |
SI7946ADP-T1-GE3 | Vishay Silic... | 0.78 $ | 1000 | MOSFET 2 N-CH 150V POWERP... |
SI7956DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 150V 2.6A PP... |
SI7946DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 150V 2.1A PP... |
SI7922DN-T1-E3 | Vishay Silic... | -- | 3000 | MOSFET 2N-CH 100V 1.8A 12... |
SI7905DN-T1-GE3 | Vishay Silic... | -- | 21000 | MOSFET 2P-CH 40V 6A PPAK ... |
SI7904DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 5.3A 121... |
SI7946DP-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 150V 2.1A PP... |
SI7938DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 60A PPAK... |
SI7972DP-T1-GE3 | Vishay Silic... | 0.35 $ | 1000 | MOSFET 2 N-CH 30V POWERPA... |
SI7922DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 100V 1.8A 12... |
SI7901EDN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.3A 121... |
SI7923DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 4.3A 121... |
SI7994DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 60A PPAK... |
SI7945DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 7A PPAK ... |
SI7900AEDN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 6A PPAK ... |
SI7925DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 4.8A 121... |
SI7980DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8A PPAK ... |
SI7949DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET 2P-CH 60V 3.2A PPA... |
SI7958DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 7.2A PPA... |
SI7962DP-T1-E3 | Vishay Silic... | 1.51 $ | 1000 | MOSFET 2N-CH 40V 7.1A PPA... |
SI7960DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 6.2A PPA... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
