| Allicdata Part #: | SI7983DP-T1-E3TR-ND |
| Manufacturer Part#: |
SI7983DP-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2P-CH 20V 7.7A PPAK SO-8 |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 7.7A 1.4W Surf... |
| DataSheet: |  SI7983DP-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 600µA |
| Base Part Number: | SI7983 |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
| Package / Case: | PowerPAK® SO-8 Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.4W |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 12A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 P-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI7983DP-T1-E3 is an integrated power array FET device used for a variety of applications. It is a 3 terminal P-channel device whose source, gate, and drain are interconnected for direct-drive applications. This integrated FET device helps reduce power consumption and increase efficiency by performing multiple switching functions in a single device. The SI7983DP-T1-E3 has a variety of features which make it particularly suitable for applications in the telecom and industrial sector. It is designed with a low on-resistance of 0.12 Ohm and an integrated ESD solution which aligns with common industrial requirements. It has low power consumption due to its intrinsic body-diode design, and can be configured with high-switching speeds of up to 10MHz. It is also designed for use in harsh environments, with an operating temperature range of -40°C to +85°C. The SI7983DP-T1-E3 is typically used in DC/DC converters, power supplies, and voltage regulation applications where switching is required. In addition, it is also used in automotive engine control and automotive body control applications. This integrated power array FET device provides increased switching speeds and reduced power consumption as compared to discrete devices. The gate voltage range of the SI7983DP-T1-E3 is -20V to +20V, which provides flexibility in the design of power supplies and other electronic systems. It is designed with integrated ESD protection, a low 0.12 Ohm on-resistance and a high 10MHz switching speed. The device is also designed with high off-state resistance, providing superior noise immunity and reliability in a wide variety of applications. The source, gate, and drain of the SI7983DP-T1-E3 are interconnected for direct-drive applications. The body diode is also integrated into the device for lower power consumption and higher efficiency. This integrated device helps reduce the parasitic and physical aspects of PCB layouts by simplifying the design of the power supply and other PCB components. The SI7983DP-T1-E3 is an excellent choice for a variety of switching applications for its superior performance, low power consumption, and high switching speeds. Its integrated ESD protection and wide gate voltage range further enhance its suitability for a variety of applications. The device is designed for harsh environments, with a temperature range of -40°C to +85°C. In conclusion, the SI7983DP-T1-E3 is an integrated power array FET device which is ideal for telecom and industrial applications. Its low on-resistance, integrated ESD protection and wide gate voltage range make it suitable for a variety of switching applications. Its high switching speed and low power consumption make it an excellent choice for cost-effective and reliable power electronic designs in both industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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