SI7945DP-T1-E3

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The SI7945DP-T1-E3 is an optimized logic level N-channel MOSFET array with two power FETs in a single package. This product is one of the many types of MOSFETs and FETs – arrays available on the market. MOSFETs or Metal Oxide Semiconductor Field Effect Transistors are a type of field-effect transistor (FET) and one of the most widely used and versatile types of transistors with a variety of applications.

The SI7945DP-T1-E3 integrates two power FETs in a single package and provides a cost-effective and efficient solution for numerous applications. This product typically features a logic level of 0.5V across the drain-source and enhanced Avalanche and dv/dt immunity. Additionally, this device includes fast body diode turn-on and a lower gate charge, as well as improved ESD protection.

In terms of the field applications, the SI7945DP-T1-E3 is mainly used for low-side switch applications in telecommunications, industrial, and enterprise digital power systems. Additionally, this product is suitable for numerous general digital power control applications, such as distributed power architectures, AC/DC and DC/DC converters, as well as motor control.

The device is designed to provide an impressive level of conduction and switching performance, with its effective on-state resistance and reduced gate threshold voltage. The on-state resistance of this device is 2.2 Ohms and its gate threshold voltage is around 2V. In addition, the device\'s maximum drain-source voltage remains at 20V and its maximum operating temperature is 175°C.

In terms of its working principle, the SI7945DP-T1-E3 is a type of FET that utilizes the principle of doping to create an insulated layer between source and drain in the transistor. This layer, called the “gate oxide”, acts as a bridge to conducting electrons between the source and the drain, forming an electric field. Once the electric field is created, the electrons in the gate oxide will flow from the source to the drain, thus allowing current to flow through the device. Changing the voltage applied to the gate affects the electric field and thus the conduction in the channel, thereby controlling the amount of current passing through the channel.

The SI7945DP-T1-E3 array\'s flexibility and the improved on-state resistance make it an excellent choice for low-side switch applications in the above-mentioned fields. The product not only provides a cost-effective and efficient solution but also features a wide range of features such as logic level of 0.5V, improved ESD protection, and improved Avalanche and dv/dt immunity.

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