SI7958DP-T1-E3

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The SI7958DP-T1-E3 is an advanced array of discrete MOSFETs manufactured by SiTime Corporation to provide the reliable performance that is essential in high density applications. This device is part of the Generation 4 family of products and is used in a wide range of applications such as high amps, high switching, and enhanced sensing. The SI7958DP-T1-E3 is an integrated solution that offers improved performance and temperature stability, as well as a more balanced current distribution throughout its high voltage/high current array.

The device features a single 16-bit monolithic array of high-transistor devices with a maximum drain current of 8 amps. The device has three operating configurations, allowing for a wide range of circuit configurations. Additionally, the device features a wide range of default gate voltages, enabling flexibility in application designs. The SI7958DP-T1-E3 also features advanced gate-to-source lead-edge integration, providing improved performance and flexibility.

The SI7958DP-T1-E3 is suitable for high-current and high-voltage applications in industrial, automotive and medical markets. In particular, it is ideal for smart power management applications such as motor control, power conversion, and power distribution, as well as other industrial applications that require fast switching, efficient power control, and accurate current. These complex applications are typically driven by embedded processors or FPGA’s, and require control technologies that combine multiple sensing, powering and motor control elements.

The SI7958DP-T1-E3’s advanced transistors are designed to maintain high switching speeds and low power dissipation. Its high breakdown voltage ensures that it can be used in high voltage applications without compromising reliability. The device also offers enhanced sensing for more accurate current measurement, which is essential for applications that require precision in power management. Additionally, the device features an optimized layout for greater current balancing and thermal performance.

The device features built-in thermal protection and features a patented technology for efficient thermal management to maintain optimal operating temperature for improved reliability. Additionally, the device features a wide range of control interfaces, including SPI and I2C, which allow users to easily integrate the array into their designs and customize its behavior to meet the specific requirements of their application.

Overall, the SI7958DP-T1-E3 is a versatile and reliable array of discrete MOSFETs that offers high current and reliable performance in a small footprint. Its advanced design ensures maximum efficiency and accurate power management while its enhanced sensing capabilities enable users to precisely control current levels. These features make it ideal for applications that require fast switching, efficient power control, and accurate current measurement.

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