SI7964DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7964DP-T1-GE3-ND

Manufacturer Part#:

SI7964DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 6.1A 1.4W Surf...
DataSheet: SI7964DP-T1-GE3 datasheetSI7964DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Base Part Number: SI7964
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI7964DP-T1-GE3 is a Quad N-channel MOSFET Array from Vishay. It is a four transistor array integrated circuit that uses a symmetric double-diffused MOSFET design for low on resistance and low gate charge. This device is available as a low-power logic gate, an inverter, or as an array for general logic applications.

The SI7964DP-T1-GE3 has a wide variety of applications, from automotive and military to consumer and industrial applications. It has many advantages, including low on-resistance, low gate charge, and low OFF-state leakage. It is highly reliable and is designed to be used in harsh environments ranging from -55°C to 150°C. This device is also designed to handle large amounts of power and has high heat dissipation capabilities.

The working principle of the SI7964DP-T1-GE3 is based on an N-channel MOSFET architecture. This type of transistor array contains four independent transistors, each with its own gate. When a voltage is applied to the gate of a particular transistor, it switches on and allows current to flow between the drain and source. Conversely, when the gate of a particular transistor is not receiving a voltage, it is off and no current will flow between the drain and source.

The four transistors in the SI7964DP-T1-GE3 are each connected to a common source and drain. Depending on the voltage applied to the gate of each transistor, the device can be used in either a simple logic gate or a more complex array. In a logic gate setup, the presence or absence of a voltage on the gate of a particular transistor controls whether current will flow between the source and drain. In an array setup, the state of several of the transistors at once controls the flow of current—for example, the output of an array might be controlled by two of the transistors.

The SI7964DP-T1-GE3 is a versatile device, with applications ranging from automotive and military uses to consumer and industrial applications. It is highly reliable, with low on-resistance, low gate charge, and low off-state leakage. Moreover, it is designed to work in harsh environmental conditions and can handle large amounts of power.

The specific data is subject to PDF, and the above content is for reference

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