SI7940DP-T1-GE3

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SI7940DP-T1-GE3 Application Field and Working Principle

The SI7940DP-T1-GE3 is a three-channel N-channel power MOSFET array, designed for use in high power DC-to-DC conversion applications. It features a built-in source-drain diode for protection in high power applications. The array has a 50V maximum VDs voltage rating, 2.7Ω on-resistance and 20A maximum continuous drain current.

The SI7940DP-T1-GE3 is a three-channel high-side power MOSFET array with a maximum VDs voltage rating of 50V. It is designed for use in switching power supplies, DC-DC converters, motor drivers, and other related high current power applications. The array has an on-resistance rating of 2.7Ω and a maximum continuous drain current rating of 20A. Its built-in source-drain diode provides protection against current spikes and short-circuits.

The SI7940DP-T1-GE3 is a versatile, high-power MOSFET array with a wide range of applications in the industrial and consumer electronics markets. It is especially suitable for applications such as switching power supplies, DC-DC converters, motor drivers, and other related high current power applications. The array\'s design features make it highly reliable and efficient in a variety of conditions and applications.

The working principle of the SI7940DP-T1-GE3 is as follows. When a voltage is applied to the gate terminal, the MOSFET channel is opened and current can flow from the source to the drain. The built-in source-drain diode provides protection against current spikes and short-circuits. The array is suitable for use in various switching power supplies and other high current applications due to its low on-resistance rating and maximum VDs voltage rating of 50V.

In conclusion, the SI7940DP-T1-GE3 is a three-channel N-channel power MOSFET array designed for use in high power DC-to-DC conversion applications. It features a built-in source-drain diode for protection in high power applications and has a 50V maximum VDs voltage rating, 2.7Ω on-resistance and 20A maximum continuous drain current. The array is suitable for use in various switching power supplies and other high current applications due to its low on-resistance rating and maximum VDs voltage rating of 50V.

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