| Allicdata Part #: | SI7960DP-T1-E3TR-ND |
| Manufacturer Part#: |
SI7960DP-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surf... |
| DataSheet: | SI7960DP-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Base Part Number: | SI7960 |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
| Package / Case: | PowerPAK® SO-8 Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.4W |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 9.7A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A |
| Drain to Source Voltage (Vdss): | 60V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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$htmlstr="The SI7960DP-T1-E3 is an N-channel 30V MOSFET array device from Vishay Siliconix. It features an 8-channel MOSFET array integrated into a surface-mounted package. It is designed for power switching in consumer and industrial applications, and each MOSFET can handle up to 30 volts of DC voltage. Each of the 8 channels is independent of the others, and the SI7960DP-T1-E3 can be used to switch DC components or inductive loads.
The main advantage of the SI7960DP-T1-E3 is its flexibility and wide range of uses. It can be used in applications such as AC/DC power supplies, DC motor drive circuits, LCD display control, and audio amplifiers. It is also suitable for automotive applications such as motor control, lighting control, and anti-lock braking systems. Its low on-resistance, high peak current capability, and fast switching speeds make it a good choice for high-speed switching applications.
Application Field
The SI7960DP-T1-E3 MOSFET can be used in a wide variety of applications. It is suitable for use in DC-DC converters, refrigerators, air conditioners, and other home appliances. It can also be used in industrial applications such as motor drives, automated control systems, and audio equipment. It is highly reliable and well suited for high-power and high-current applications.
Working Principle
The MOSFET array works on the principle of charge-carrier injection and avalanche breakdown. The voltage applied to the gate controls the MOSFET, allowing or blocking current flow through the device. The charge carriers are injected into the channel through the gate, and when the voltage is large enough, avalanche breakdown occurs, allowing current to flow through the device. This principle is the basis for MOSFETs, which are widely used in many different applications.
The SI7960DP-T1-E3 is a highly reliable device with a wide range of applications. It can be used in high-power, high-current applications and its low on-resistance and fast switching speeds make it an ideal choice. Its flexibility and wide range of uses make it a versatile device that is suitable for many different applications.
";echo $htmlstr;The specific data is subject to PDF, and the above content is for reference
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SI7960DP-T1-E3 Datasheet/PDF