SI7948DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7948DP-T1-GE3TR-ND

Manufacturer Part#:

SI7948DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 60V 3A PPAK SO-8
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 3A 1.4W Surfac...
DataSheet: SI7948DP-T1-GE3 datasheetSI7948DP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI7948
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI7948DP-T1-GE3 application field and working principle can broadly be classified under transistors, FETs, and MOSFETs arrays. The SI7948DP-T1-GE3 is a dual, monolithic, n-channel, common source MOSFET array with a high density level-shift circuit element. This MOSFET array includes two integrated circuits with optimized designs, temperature and process characteristics, making it suitable for use in different types of general purpose and industrial applications. The SI7948DP-T1-GE3 is designed to provide excellent power handling and stable behavior with a maximum collector to source voltage of 600V and a drain current of 111 A. The high-density MOSFET array included on the SI7948DP-T1-GE3 features a pair of high-performance n-channel enhancement MOSFETs in a single silicon die. Both MOSFETs have a common source connection. The MOSFETs are constructed with a high-density vertical DMOS process and feature adjustable body diode diodes in order to reduce switching losses as well as power consumption. The SI7948DP-T1-GE3 array also features an advanced level-shift circuit. This circuit allows for better control over the switching speed of the two MOSFETs, minimizing power loss and improving efficiency. This circuit can also be used to control the current flow in both directions. The level-shift circuit also helps to reduce noise generated by the array. The SI7948DP-T1-GE3 array is ideal for a variety of general purpose and industrial applications. The MOSFETs can be used for motor control, lighting applications, and high power switching. The level-shift circuit can be used to reduce noise and improve system efficiency in industrial automation, automotive, and consumer systems. The SI7948DP-T1-GE3 array is a robust and reliable solution for the most demanding applications. Thanks to the high-performance n-channel MOSFETs, the level-shift circuit, and the robust design, the SI7948DP-T1-GE3 array is able to handle high current and voltage requirements. The combination of these features makes the SI7948DP-T1-GE3 array an ideal choice for a broad range of industrial and general purpose applications.

The specific data is subject to PDF, and the above content is for reference

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