SI7972DP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the SI7972DP-T1-GE3

The SI7972DP-T1-GE3 is a high-performance, low cost, single channel N−FET array device that is designed for use in high-side switching circuits. It features a wide range of operating voltages, low RDS(on), and zero gate threshold voltage.

Application Field of the SI7972DP-T1-GE3

The SI7972DP-T1-GE3 is used primarily in automotive and industrial applications. Its high-side switching capability makes it suitable for power distribution, load switching, and battery-powered systems. Similarly, it can be used in high-power audio applications requiring reliable, low-noise performance. Its small package size and low RDS(on) are also advantageous in portable and handheld applications.

Additionally, the SI7972DP-T1-GE3 provides the flexibility of an adjustable drain-source voltage. This feature allows for adjustable, variable frequency, and class-D power conversion, as well as high frequency switching, without the need for an additional control circuit. Furthermore, the adjustable drain-source voltage enables the user to optimize the design for improved efficiency and reduced power consumption.

Working Principle of the SI7972DP-T1-GE3

The SI7972DP-T1-GE3 is a single channel N−FET array device designed for use in high-side switching circuits. When the gate of the FET is driven with a voltage greater than the threshold voltage, the FET conductance increases due to the number of electrons that move from the source to the drain. The increase in conductance results in a decrease in RDS(on) as current flows between the source and the drain. The voltage on the gate of the FET controls the amount of current that can flow through the FET, giving the user control over the device.

The SI7972DP-T1-GE3 also features an adjustable gate threshold voltage. This feature allows users to control the threshold voltage of the FET, enabling them to optimize the device’s performance for a wide range of conditions. This adjustable gate threshold voltage also allows users to select the optimal operating current levels to achieve the best performance.

Conclusion

The SI7972DP-T1-GE3 is a high-performance, low cost, single channel N−FET array device that is designed for use in high-side switching circuits. It features a wide range of operating voltages, low RDS(on), and adjustable gate threshold voltage. This array device offers greater versatility in applications such as power distribution, load switching, battery-powered systems, and portable and handheld applications. Its adjustable threshold voltage ensures optimal operation and performance for variable frequency and class-D power conversion.

The specific data is subject to PDF, and the above content is for reference