SI7900AEDN-T1-E3

Vgs(th) (Max) @ Id:	900mV @ 250µA
Base Part Number:	SI7900
Supplier Device Package:	PowerPAK® 1212-8 Dual
Package / Case:	PowerPAK® 1212-8 Dual
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.5W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual) Common Drain
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI7900AEDN-T1-E3 is a high-speed and low-level switching array that are designed to help reduce power dissipation, increase system switching speed, and control the load regulation. This transistor array consists of an array of three N-MOSFET devices and is designed to be used as an output stage in low-level applications where high-speed switching is needed. The SI7900AEDN-T1-E3 can be used in a variety of applications, including automotive, consumer electronics, industrial, medical and military systems.The SI7900AEDN-T1-E3 array is designed to handle up to 30V and 500mA of current, making it ideal for use in high-current switching applications. Its N-channel MOSFETs ensure better signal transmission, lower power dissipation, faster switching speed and more accurate signal regulation. The array also features an integrated charge pump that provides additional current for transition times between logic levels.The SI7900AEDN-T1-E3 array is a popular choice for low-level power switching applications due to its flexible operating voltage range and low power consumption. The integrated charge pump helps reduce power consumption even further by providing the necessary current to transition between logic levels during switching operations. In addition, the array is designed to reduce noise, maintain signal integrity, and provide improved system speed.The array also features a low on-resistance, which helps reduce power dissipation, allowing the device to be used in high-current and high-voltage applications. Additionally, the array features excellent thermal dissipation, ensuring reliable and stable operation even when high currents and voltages are applied.The SI7900AEDN-T1-E3 array is a highly efficient and reliable transistor array, and is ideal for use in automotive, consumer electronics, industrial and military applications. The array helps reduce power consumption and maintain signal integrity, while providing fast switching speeds and improved system speed. The low on-resistance feature helps reduce power dissipation and thermal dissipation, while the integrated charge pump provides additional current for transition times between logic levels.

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