SI7960DP-T1-GE3

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The SI7960DP-T1-GE3 is a full-bridge P-channel MOSFET Transistor array designed for power applications using analog, switching, and pulse techniques. This device is capable of providing optimum performances in various applications, from low power to high current applications.

The array consists of two parallel N-channel MOSFETs and two parallel P-channel MOSFETs in a single device. This makes it reliable while still delivering an excellent high-speed switching performance. Additionally, it has a fully isolated gate drive structure with an increased input impedance.

The SI7960DP-T1-GE3 has a high-speed switching performance with up to 3V drain-source voltage and small On-resistance. The device also has an adjustable gate threshold voltage, an adjustable threshold temperature, and an adjustable on-resistance. This allows the use of the device in a wide range of applications such as DC/DC converters, switching regulators, and automotive applications.

The device delivers an output voltage and current of up to 800V and 25A, respectively. This makes it suitable for transmitting power for its intended purpose. The device is also designed for use in high-temperature environments, with a maximum operating temperature of up to 175°C. Additionally, the device has superior thermal management by using a built-in heat sink and thermal pads.

The SI7960DP-T1-GE3 is constructed with a lead-free assembly process and halogen-free package materials. This device is also RoHS and REACH compliant. This makes the device suitable for use in environmentally friendly applications. Furthermore, the device provides superior reliability with a low failure rate in operation.

In terms of application fields, the device is ideal for use in industrial electronics, lighting control, solar and battery applications, home appliances, and automotive electronics. In terms of working principle, the device utilizes the principle of electro-thermal feedback circuits. This allows it to accurately sense the temperature and automatically adjust the gate voltage to maintain its performance.

The SI7960DP-T1-GE3 is an ideal solution for providing high-speed switching performance in various power applications. Its built-in features and superior reliability make it a good choice for applications requiring high efficiency and long-term reliability.

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