SI7946DP-T1-E3

Vgs(th) (Max) @ Id:	4V @ 250µA
Base Part Number:	SI7946
Supplier Device Package:	PowerPAK® SO-8 Dual
Package / Case:	PowerPAK® SO-8 Dual
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.4W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	150 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C:	2.1A
Drain to Source Voltage (Vdss):	150V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI7946DP-T1-E3 is an integrated circuit composed of an N-channel field effect transistor (FET) array. A FET is a type of transistor that differs in construction and operation compared to other types of transistors. This specific chip has 14 N-channel FETs arranged in a matrix array, and contains some of the latest FET technology that has a broad range of applications across several industries.The main purpose of the array on the SI7946DP-T1-E3 is to act as a source or drain for current, allowing for a high level of control of electrical signals (voltages, currents, etc.) and data. By using this array, it becomes possible to perform various operations like switching on and off, controlling the rise and fall times of signals, setting precise levels, and so on. This makes the array an attractive choice for digital signal processing and power applications.The SI7946DP-T1-E3 offers several benefits to its users. First, it uses an advanced FET technology that allows for more precise and efficient operation than other types of transistors. Additionally, its low on-resistance makes it ideal for power applications where the switching efficiency is important. Finally, the array offers greater speed and performance when compared to other FET-based solutions. This makes it the perfect choice for applications where speed, accuracy, and reliability are of paramount importance.In terms of its applications, the SI7946DP-T1-E3 can be used in a wide variety of situations. For example, it is frequently used in power inverters, motor controllers, and power supplies. Furthermore, it is also used in automotive, industrial, and communication systems. The array can also be used in medical and military applications, where precise control of signals is required.The working principle behind the SI7946DP-T1-E3 is based on the concept of source-drain control. This is the principle whereby a voltage applied to the gate of the FET array, and then the current is allowed to flow through the source-drain paths. Depending on the voltage applied to the gate, the current flowing through the source-drain paths can be controlled and adjusted. This, in turn, enables the user to effectively manage the flow of signals and data through their system.In conclusion, the SI7946DP-T1-E3 is an advanced chip that incorporates the latest in FET technology in order to offer increased signal control, power efficiency, and reliability. Its ability to achieve precision signal control makes it an attractive option for many different applications and environments, ranging from automotive to medical, and military applications. The key to the success of this device is its working principle, which makes it possible to control the voltage applied to the gate and then modify the current as desired. Thanks to this, the array can be used in a variety of systems and provide excellent results.

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