SI7901EDN-T1-E3

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The SI7901EDN-T1-E3 is an advanced power MOSFET array specifically designed for high power switching applications. It is a dual N-channel device with a current rating of up to 75A and a voltage rating of up to 20V. It is ideal for switching power in both DC and AC applications, and is especially suited for automotive and high reliability applications.

The SI7901EDN-T1-E3 consists of two separate N-channel MOSFET dies which are connected internally in an "inverse parallel" configuration, resulting in a device that acts as one component with two MOSFETs. This device features both VGS and thermal shutdown protection to ensure safe operation. It also has excellent commutation characteristics, making it ideal for automotive and high-reliability applications.

The SI7901EDN-T1-E3 is ideal for use in automotive applications such as ECUs, ABS systems, and alternators. It is also well suited for high-power and high-speed switching applications such as DC/DC converters, DC and AC motor drives, and lighting control circuits. The device is available in a variety of package options, allowing for optimized board layout, minimized board space and improved system performance.

The working principle of the SI7901EDN-T1-E3 is simple. When a voltage is applied to the Gate of the device, the current flow is switched on. As the voltage applied to the Gate is increased, the current flow is increased, until the device reaches its maximum current rating. When the voltage applied to the gate is reduced, the device switches off, and the current flow stops.

The SI7901EDN-T1-E3 provides superior performance and reliability when compared to other power MOSFET arrays. It is an ideal solution for high-power and high-speed switching applications, and provides excellent thermal and noise characteristics. Additionally, it is available in a variety of packages, allowing for optimized board layout and improved system performance.

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