SI7940DP-T1-E3

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Base Part Number:	SI7940
Supplier Device Package:	PowerPAK® SO-8 Dual
Package / Case:	PowerPAK® SO-8 Dual
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.4W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	17 mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	7.6A
Drain to Source Voltage (Vdss):	12V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI7940DP-T1-E3 is a 3-lug symmetrical N-channel packaged power MOSFET array designed for use in lighting, motor control and other medium voltage applications. It features excellent electrostatic protection, low gate threshold voltage and low on-resistance. This device is designed for use in on-off control circuits as well as current-mode switching applications. The SI7940DP-T1-E3 is an array of 3 N-channel MOSFETs in a dual package. The package contains two separate die, one forming the P-channel MOSFETs, and the other forming the N-channel MOSFETs. The two die are electrically isolated and connected via a thermal resistance link which is electrically insulated by a dielectric material. This allows for a wide temperature operating range and excellent thermal dissipation. In order to operate correctly, the SI7940DP-T1-E3 needs to be provided with the correct gate drive voltage. This is usually done by either a dedicated gate driver IC or discrete transistors. The gate voltage must be kept between 8-12V, with a maximum of 16V, to ensure the device operates reliably. When the gate drive voltage is applied, the device operates in either an on-state or an off-state. When in the on-state, the device acts as a low-resistance path between the drain and source of the package. When in the off-state, the device acts as an open circuit between the drain and the source of the package. This allows the device to be used to switch between various DC voltage levels. The SI7940DP-T1-E3 is commonly used in motor control applications, where a low gate threshold voltage and low on-resistance is required. The device can also be used for lighting applications, in which its wide temperature operating range and excellent thermal dissipation are advantageous. The device is also suitable for use in PWM switching applications, where the low gate threshold voltage is desirable. The SI7940DP-T1-E3 is an ideal solution for medium voltage applications. It features excellent electrostatic protection, low gate threshold voltage and low on-resistance. This device is designed for use in on-off control circuits as well as current-mode switching applications and is capable of providing excellent performance in a variety of medium voltage applications.

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