SMMBD701LT1G

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The SMMBD701LT1G is a RF diodes designed for use in applications that require high-frequency switching or signal conversion. The device is an ideal choice for such applications, due to its small package size and superior performance characteristics.

The SMMBD701LT1G is a Silicon-Germanium (SiGe) based Schottky barrier diode that features an anode connected to the gate and a cathode connected to the source. This diode structure allows for excellent RF performance including high dynamic range, high-frequency stability, and good isolation properties. The device also features an integrated Schottky gate that improves its isolation performance, making it ideal for use in high-frequency applications.

The SMMBD701LT1G is designed specifically for use in small form factor applications such as mobile phones, tablets, and other handheld devices. The diode’s small package size make it suitable for use in space constrained designs. The device is also designed to operate over a wide temperature range and has a high-temperature storage, making it suitable for use in a wide range of applications.

The SMMBD701LT1G has a gate-source voltage (VGS) rating of -2 to +2 V, and a drain-source Voltage (V DS) of -4 to 0V. The diode’s maximum drain current is 0.5mA, and its peak forward voltage (VF) is 0.8V. The device also has a low reverse recovery time (trr) and a high forward current (I F). These properties make it well suited for use in switchmode and signal conversion applications.

The SMMBD701LT1G is designed to operate over a wide frequency range, and has excellent RF characteristics. Its high frequency stability and isolation properties make it ideal for use in high frequency applications such as RF switching, signal conversion, and filter applications. The device also has a high power handling capability, making it suitable for use in high power applications.

The SMMBD701LT1G is an excellent choice of diode for high-frequency switching and signal conversion applications, due to its small package size and superior performance characteristics. The device is well matched to applications that require high-frequency stability, isolation, and power handling, making it an ideal choice for demanding applications where space and performance are critical considerations.

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