| Allicdata Part #: | SPD02N80C3ATMA1TR-ND |
| Manufacturer Part#: |
SPD02N80C3ATMA1 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 800V 2A 3TO252 |
| More Detail: | N-Channel 800V 2A (Tc) 42W (Tc) Surface Mount PG-T... |
| DataSheet: | SPD02N80C3ATMA1 Datasheet/PDF |
| Quantity: | 2500 |
| 2500 +: | $ 0.33269 |
| Vgs(th) (Max) @ Id: | 3.9V @ 120µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 1.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SPD02N80C3ATMA1 is a power MOSFET transistor, or Metal–Oxide–Semiconductor Field-Effect-Transistor (MOSFET). The advanced and reliable MOSFET technology used in this transistor is designed to operate in a wide range of application fields, as well as providing an efficient transfer of power through its usage.
The SPD02N80C3ATMA1 is generally used as a switching device in power control systems. Due to its low on-resistance, the transistor can carry a high current load with less power lost in its operation. This reduces the power consumed and helps increase power efficiency. Additionally, its superior electrical characteristics, including low gate threshold voltage and very little input capacitance, make it useful for high frequency switching applications.
The working principle of the SPD02N80C3ATMA1 is quite simple. It works by transferring the voltage applied to its gate terminal to its other terminals, called drain and source. The transistor behaves like a variable resistor, and its resistance is directly proportional to the voltage applied to its gate. An increase in the voltage of the gate causes an increase in the resistance between the source and the drain and the flow of electrons through the channel is reduced.
When the gate voltage is brought down, the transistor will switch to a low-resistance state, allowing current to flow freely between the source and the drain. This switching action makes the transistor useful in power control systems, as the switching can be performed quickly in response to voltage changes. This helps to increase power efficiency, as the transistor can reduce power consumption by managing the flow of current through the circuit.
Overall, the SPD02N80C3ATMA1 is a highly versatile and efficient power MOSFET transistor. It can be used in a variety of applications, from high-frequency switching to power control systems, due to its various features and advanced technology. With its low gate threshold voltage and low on-resistance, the transistor can provide an efficient and reliable power transfer in any circuit, making it an ideal choice for power-related applications.
The specific data is subject to PDF, and the above content is for reference
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SPD02N80C3ATMA1 Datasheet/PDF