STD3NM60-1

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Power Dissipation (Max):	42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	324pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	MDmesh™
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STD3NM60-1 Application Field and Working Principle

Introduction

The STD3NM60-1 is a general-purpose N-MOSFET intended for use in various load-switching circuits, motor control applications and portable power management. It is an insulated gate field effect transistor (IGFET) that uses a reduced gate voltage to control the current flow through a drain-source channel. This makes it a crucial component in the modern electronic system.

Application Fields

The STD3NM60-1 differs from other N-channel FETs as it is optimized for low gate drive power and signal processing. This makes it an ideal choice for medium power applications where space is constrained, such as portable personal electronics, automotive switching circuits and signal conditioning. It is well suited for use in audio power amplifiers, power supplies and feedback signal circuits. Additionally, its low conduction loss reduces opertating temperatures and enhances power efficiency in home appliances.

Features

The STD3NM60-1 is a low power Insulated Gate Field Effect Transistor with an optimised package designed to reduce power consumption in medium power circuits. It features:
• Low on-state resistance for improved efficiency
• Low capacitance for improved signal integrity
• Low gate drive power for improved signal processing
• Internal electrostatic discharge protection
• High-voltage breakdown capability

Working Principle

The basic working principle of the STD3NM60-1 FET is simple. When the gate voltage is increased, electrons from the source side overrun into the drain side and thus creates an inversion layer at the drain side. This leads to an increase in drain current given by the equation: Id = K((Vgs-Vt)²), where K is a device parameter, Vgs is the gate-to-source voltage and Vt is the threshold voltage. The drain current can be increased by increasing the Gate voltage or by decreasing the threshold voltage. The voltage across the channel is determined by the difference between drain voltage and gate voltage and is known as the channel voltage. The channel voltage is proportional to the drain current. When the channel voltage exceeds the threshold voltage, the drain current starts to increase and this is referred to as the channel turning-on. The threshold voltage is mainly determined by the doping concentration of the channel and the oxide thickness. As the oxide thickness increases, the threshold voltage decreases. This makes the STD3NM60-1 suitable for low power applications as it is less likely to turn on unintentionally due to a back bias. The transconductance of the device is determined by the gate voltage, drain voltage and the temperature: gm = (Id/Vgs).

Conclusion

The STD3NM60-1 is an advanced N-channel FET suitable for low power applications. Its low conduction loss reduces operating temperatures, while its reduced gate drive power, low capacitance and high breakdown voltage ensure signal integrity and improved signal processing. It can be used in many applications such as portable personal electronics, automotive switching circuits, audio power amplifiers and feedback signal circuits. The device is controlled by the gate-to-source voltage, and its threshold voltage is determined by the doping concentration of the channel and the oxide thickness.

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