STD3N80K5 Discrete Semiconductor Products |
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| Allicdata Part #: | 497-14267-2-ND |
| Manufacturer Part#: |
STD3N80K5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 800V 2.5A DPAK |
| More Detail: | N-Channel 800V 2.5A (Tc) 60W (Tc) Surface Mount DP... |
| DataSheet: |  STD3N80K5 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 130pF @ 100V |
| Vgs (Max): | 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 10V |
| Series: | SuperMESH5™ |
| Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The STD3N80K5 is a n-channel enhancement mode field effect transistor (FET). This FET device is commonly used in switching applications and other circuits that require high performance and better signal handling capabilities. It features an internal source resistor and an avalanche energy-handling capability up to 33.6 W. It also has a high temperature operation up to 150°C. The STD3N80K5 is primarily used in switching and amplification designs, and its main function is to act as for a fast switch. With its inherent high voltage and current capabilities, the device can be used in power supply circuits as well as voltage clamping applications. It is also used for motor control applications and as a driver for logic circuits. The STD3N80K5 can also be used to construct gate drivers for MOSFETs, IGBTs, and other power devices. The device can operate in load conditions that ranges from 10 A to 28 A, and it features an on-resistance of 0.034 Ω and an off-state breakdown voltage of 700 V. It also offers a drain-source breakdown voltage of 1200 V, which allows it to handle a wide range of power applications.When it comes to performance, the STD3N80K5 features various features that make it a suitable choice for switching and amplification designs. The device comes with integrated high-voltage protection, which prevents excessive gate-source capacitance, allowing it to reach switching speeds of up to 5 ns. This feature also reduces the power consumption of the device and helps it perform more efficiently. The internal protection mechanisms of the device also reduce its switching losses and offer high reliability with its high temperature operation capability. Its low on-resistance also allows the device to reach higher currents, effectively eliminating switching losses and reducing power consumption.The STD3N80K5 has an N-channel MOSFET construction, which allows it to offer an avalanche energy-handling capability up to 33.6 W. It is also able to reach higher temperatures due to its junction temperature rating of 150°C. Thanks to its internal protection mechanisms, the device can handle up to 10 A of external drain current and 60 A of internal drain current. The device is also able to take advantage of a maximum drain-source voltage of 650 V and a maximum gate-source voltage of ±20 V. The device also features a source inductance of 0.33 nH and a drain inductance of 0.50 nH. This allows the device to handle higher power applications effectively, even with a wide range of load variations. The main working principle behind the STD3N80K5 is that it uses an N-channel MOSFET construction and its metal-oxide-semiconductor properties to handle high-voltage and current applications. It uses an integrated gate-source protection structure in order to reduce power consumption and increase the switching speeds. It also features a high temperature operation up to 150°C and an avalanche energy-handling capability up to 33.6 W.Overall, the performance of the STD3N80K5 is excellent and it can be used in a wide range of applications, such as switching and amplification designs, power supply circuits, voltage clamping applications, motor control applications, and as a driver for logic circuits. It is also suitable for use in gate drivers for MOSFETs, IGBTs, and other power devices because of its high voltage and current capabilities.
The specific data is subject to PDF, and the above content is for reference
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