Allicdata Part #: | 497-10093-2-ND |
Manufacturer Part#: |
STD3NK60ZD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 2.4A DPAK |
More Detail: | N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount DP... |
DataSheet: | STD3NK60ZD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 311pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 10V |
Series: | SuperFREDmesh™ |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD3NK60ZD is a vertical double diffused power MOSFET, designed and manufactured by STMicroelectronics. It is classified as a Single MOSFET. This transistor is made from silicon on insulator (SOI) material, and is package in a TO-220 package for high current applications.
The STD3NK60ZD has many desirable characteristics, such as a low drain to source on-state resistance (RDS(on)) of 2.4Ω, a maximum drain current of 15A, and a maximum drain to source voltage (VDS) of 100V. It is also rated to operate over an ambient temperature range of -55 to 175°C. Together, these properties make it a suitable choice for a variety of energy-efficiency and reliability demanding applications.
The application field of the STD3NK60ZD is relatively broad, as it can be used in circuits requiring high currents and voltage across multiple applications. This can range from industrial, home appliances, automotive, consumer electronics to power supplies. As an example, in consumer electronics, this transistor can be used to control high power devices such as lights and motors in household electrical appliances, video lens in hard disk drives, optical disk drives, and power amplifiers in stereos.
The working principle of the STD3NK60ZD is based on the MOSFET transistor characteristic. The MOSFET transistor has three pins, namely drain, gate and source. The resistance between the drain and the source is controlled by the voltage applied to the gate. Consequently, the drain current can be adjusted depending on the voltage applied at the gate. This feature makes MOSFET transistors excellent for switching applications since the gate voltage can be used to control the on/off condition.
The STD3NK60ZD relies on a vertical double diffused type of MOSFET. This type of transistor requires the addition of two source regions within the substrate: one providing electrons and the other providing holes. The double diffused implies that the source regions are each connected to a separate gate and each region serves a different purpose. The advantage of this design is that it offers improved power and thermal characteristics, while reducing the overall package size.
In conclusion, the STD3NK60ZD belongs to the Single MOSFET Transistors FETs category, and is capable of handling current up to 15A and voltage up to 100V. It is a suitable choice for a variety of energy-efficiency and reliability demanding applications in industries, home appliances, automotive, consumer electronics and power supplies. Its working principle is based on the MOSFET transistor characteristics. The drain current is adjusted depending on the voltage applied on the gate. Finally, this transistor is designed using a vertical double diffused MOSFET, which offers improved power, thermal characteristics, and reduces the overall package size.
The specific data is subject to PDF, and the above content is for reference
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