STD30NF06LAG

Rds On (Max) @ Id, Vgs:	--
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Vgs (Max):	--
Vgs(th) (Max) @ Id:	--
Series:	STripFET™
Drive Voltage (Max Rds On, Min Rds On):	--
Current - Continuous Drain (Id) @ 25°C:	28A
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STD30NF06LAG Application Field and Working Principle

The STD30NF06LAG transistor is a general-purpose N-Channel enhancement mode MOSFET which is specially designed for low voltage, high speed switching applications. This type of MOSFET is capable of providing up to 30A of continuous drain current at 10V drain-source voltage. It can be used in a large variety of applications such as switch mode power supplies, motor control, and automotive systems. Additionally, the STD30NF06LAG also features an integrated gate protection diode.In this article, we will discuss the application field and working principle of the STD30NF06LAG. We will also provide a brief overview of its design specifications.

Application Field

The STD30NF06LAG transistor can be used in a variety of switching applications. It is suitable for use in low-voltage, high-speed switching circuits. Additionally, it is also capable of handling high voltage and high current applications. This makes it suitable for a range of motor control and switch mode power supply applications. Furthermore, the integrated gate protection diode ensures greater reliability when switching. The STD30NF06LAG transistor is also suitable for use in automotive systems. Its high switching speed and lower on-state resistance make it an ideal choice for various automotive control systems. Moreover, its low total gate charge ensures better efficiency and heat dissipation in automotive applications.

Working Principle

The STD30NF06LAG is an N-Channel Enhancement Mode MOSFET, or eMOSFET. This type of MOSFET is designed for low voltage and high speed switching applications. It features a drain-source on-state resistance of 0.02 ohms, a gate-source threshold voltage of 4V, and a maximum drain-source voltage of 30V. In eMOSFETs, the gate is insulated from the channel to create an enhancement region. When the gate is low, no current flows through the channel. However, when the gate is rendered high, a conductive path is created between the source and the drain, allowing current to flow. The STD30NF06LAG has a maximum current rating of 30A, which makes it suitable for high current applications.

Design Specifications

The STD30NF06LAG transistor has a maximum drain current of 30A, a drain-source voltage of 30V, and a gate-source threshold voltage of 4V. It also features an on-state resistance of 0.02 ohms and a total gate charge of 40nC. Additionally, the device has an integrated gate protection diode which provides protection against reverse voltages. Finally, the device can operate up to 175 degrees Celsius, making it ideal for use in high temperature environments.

Conclusion

In conclusion, the STD30NF06LAG is a general-purpose N-Channel enhancement mode MOSFET designed for low voltage and high speed switching applications. It is suitable for use in switch mode power supplies, motor control, and automotive systems. Additionally, the device features an integrated gate protection diode for greater reliability and efficiency in switching. The device also has a maximum drain current of 30A, a drain-source voltage of 30V, and a gate-source threshold voltage of 4V.

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