Allicdata Part #: | 497-3157-2-ND |
Manufacturer Part#: |
STD30NF03LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 30A DPAK |
More Detail: | N-Channel 30V 30A (Tc) 50W (Tc) Surface Mount DPAK |
DataSheet: | STD30NF03LT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD30NF03LT4 is a low-threshold voltage MOSFET, which belongs to the single N-channel MOSFET (metal oxide semiconductor field-effect transistor) category. It boasts a wide variety of applications, and its working principle is quite versatile. This article will explain both the application field and the working principle of the STD30NF03LT4.
The STD30NF03LT4 is designed to provide high-efficiency protection and power in a wide variety of fields, primarily system logic and power regulation. The device features low input gate threshold voltage and low “on-state” resistance, making it an ideal choice for system logic and power regulation applications requiring high level of efficiency, such as notebook PCs and LCD televisions.
The STD30NF03LT4\'s threshold voltage of 2.0V is optimized to ensure consistent operation at low current levels. It boasts excellent efficiency and low power product with an input gate voltage range of 0.2V to 7.0V. In addition, the device features a low on-state resistance of 20 mΩ max. This low resistance value is key to high efficiency in the application of power regulation.
The STD30NF03LT4 is also designed for efficient system logic performance. Its low input gate voltage minimizes the current flow necessary to conduct a successful transaction, while the low on-state resistance enables higher power performance while maintaining small and efficient package size. With a voltage gate range of 0.2V to 7.0V, the STD30NF03LT4 is a viable choice for applications that require consistent performance across a wide range of working conditions, such as hand-held electronic devices.
The working principle of the STD30NF03LT4 is based on the traditional working mechanisms of the MOSFET. When the device is in its “on” state, a small gate-source voltage is applied. This, in turn, causes a flow of electrons from the source to the drain, which results in an increase in the resistance of the MOSFET. The device is then turned off when the voltage is decreased below its threshold value. The low threshold voltage and low on-state resistance of the STD30NF03LT4 enables it to operate reliably and efficiently even under low-current and high-voltage loads.
In summary, the STD30NF03LT4 is a low-threshold voltage MOSFET designed for use in system logic and power regulation applications. It features excellent efficiency and low power product, and its low-threshold voltage is optimized to ensure consistent operation at low current levels. The principle behind the STD30NF03LT4’s working is based on the traditional mechanisms of the MOSFET, where a small gate-source voltage causes a flow of electrons from the source to the drain. This, in turn, results in an increase in the resistance of the MOSFET, enabling efficient and reliable operation even under low-current and high-voltage loads.
The specific data is subject to PDF, and the above content is for reference
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