STD3NK60Z-1

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The STD3NK60Z-1 is a voltage-controlled enhancement mode MOSFET that is used in multiple applications in the telecommunication, automobile and computer industries. MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) are four layer transistors that primarily serve to regulate current between two terminals (the source and the drain). The STD3NK60Z-1 is a type of insulated-gate field-effect transistor, commonly referred to as an IGFET, that is designed to handle relatively high temperatures and voltages with superior efficiency.

The MOSFET consists of three regions: the source, the drain, and the channel. The source and drain regions are metal conductors, while the channel is a thin semiconductor layer between the source and drain. Each region is separated by a thin oxide layer, which is an insulator. Hence its name, the MOSFET acts like a valve, controlling the flow of electrons in the device, depending on the voltage applied to its gate terminal. In this manner, the device can be used as either an amplifier or a switch.

The STD3NK60Z-1 is a N-channel field-effect transistor or FET. It is an enhancement-mode, which means that it can be controlled through the gate electrically and is enabled by a positive voltage applied to the gate terminal. The device has extremely low on-state resistance and fast switching, and is highly efficient in power conversion and management between two terminals, or from AC to DC. The largest benefit of FETs is their low input and output capacitance, ideally suited for high-frequency applications.

The STD3NK60Z-1\'s application field extend to various medium to high power applications such as power supply, motor drive and UPS, as well as various applications that require high switching speeds and efficient power conversions. The device is also frequently employed in servers, automotive systems, and other industrial and consumer electronics to provide switching, amplifying and strengthening capabilities. Some of these include generators, fuel pumps, solenoid valves, compressors, and electric motor drivers.

In terms of its ability to handle high currents and voltages, the maximum drain current (ID) of the device is up to 60A and its maximum drain-source voltage (VDSS) is 600V. Its maximum RDS(on) is 1.25mΩ, and the maximum junction temperature (Tj) is 175°C. In addition, the device\'s design provides excellent reliability during high voltage transient and AC insulation requirements with its outstanding surge capability, durability, and improved linearity.

The STD3NK60Z-1 is cost and size-efficient, and offers high di/dt and dv/dt capability and wide SOA (Safe Operating Area). As a result, the device can achieve fast switching speeds and better noise immunity, enabling smaller form factors and high reliable rated power and improved system performance. The STD3NK60Z-1 provides superior ESD (electrostatically discharge) protection, meeting the toughest ESD requirements for laptop and mobile device applications, and also has a high surge capability for a wide array of applications.

It is a robust and reliable power solution that helps enhance signal processing performance and benefit the end-user with improved system performance, higher efficiency and extended reliability. The robust design of the STD3NK60Z-1 also makes it ideally suited for computer servers and high-end electronic devices, where its fast switching speeds, low on-state resistance, and improved power conversion capabilities are of great benefit to the user.

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