Allicdata Part #: | STD3NM50T4-ND |
Manufacturer Part#: |
STD3NM50T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V 3A DPAK |
More Detail: | N-Channel 550V 3A (Tc) 46W (Tc) Surface Mount DPAK |
DataSheet: | STD3NM50T4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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It is well-known that the transistor is a very important electronic component in modern electronics and serves as the basis of most digital devices today. The field effect transistor, or FET, is a type of transistor used in devices such as amplifiers and digital-to-analog converters. The STD3NM50T4 is a type of MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is designed for applications such as low-noise amplifiers, high-frequency switching, and audio power amplifiers.The working principle of a MOSFET is based on the fact that when a voltage is applied to the gate terminal, it modifies the conductivity of the channel between the source and the drain. This allows it to act as an amplifier, switching current on and off between the source and the drain. The Drain-Source voltage, VDS, will determine how much current can flow through the channel, or the drain current, IDS. The channel is very narrow and has a high resistance, so the MOSFET is able to limit the amount of current that can flow through it.The STD3NM50T4 is a N-channel MOSFET, which means that it works by having a majority of electrons available in the channel. When the gate voltage is applied, the electrons form the channel, allowing the current to flow from the source to the drain. This makes it an ideal choice for low-noise amplification, as it can efficiently amplify signals without any distortion. Additionally, the STD3NM50T4 has a maximum drain current of 20A and an on-state resistance of 0.4 ohms, making it very efficient for switching applications.In addition to its primary use in amplifying and switching applications, the STD3NM50T4 is also widely used in power supply and motor control systems, ensuring that devices are operating efficiently and without generating excessive amounts of heat. It can be used to regulate current, voltage, and power output in order to maximize efficiency and minimize losses. Additionally, its low on-state resistance and high switching capabilities make it ideal for power conversion, allowing it to quickly switch between different output voltages in order to meet a variety of operational needs.Overall, the STD3NM50T4 is an excellent choice for a variety of applications, thanks to its robust design, efficiency, and thermal stability. Its high-efficiency switching capabilities make it an ideal choice for power supplies and motor control systems, while its low-noise amplification properties make it an excellent choice for audio amplifiers and digital-to-analog converters. As such, it is a versatile and reliable component for a variety of electronic applications.The specific data is subject to PDF, and the above content is for reference
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