Allicdata Part #: | 497-2475-2-ND |
Manufacturer Part#: |
STD35NF3LLT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 35A DPAK |
More Detail: | N-Channel 30V 35A (Tc) 50W (Tc) Surface Mount DPAK |
DataSheet: | STD35NF3LLT4 Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD35NF3LLT4 is a controlled current source/sink, SPICE-compatible, N-Channel Enhancement-Mode Power MOSFET. This device is a part of STD35N family of MOSFETs with rated drain current of 3.0A, drain source voltage of 30V, low threshold voltage and fast switching speed. The STD35NF3LLT4 is suitable for various applications including DC-DC converters, Power switches and circuits with low side switch.
The main application field of STD35NF3LLT4 is in portable electronic devices, such as laptop adapters, cell phones, tablets and cameras. It can be used as a low side switch in battery circuits, as switching regulator, as a power switch in dc-dc converters, and as a power amplifier in battery operated systems. In these applications, the STD35NF3LLT4 provides an efficient and reliable way to switch power.
The working principle of the STD35NF3LLT4 is based on the basic MOSFET structure. It contains an insulated gate that is separated from the drain and source by an oxide layer. When the gate voltage reaches a certain threshold level, the MOSFET turns on by conducting current between the drain and source. When the gate voltage decreases below the threshold level, the MOSFET turns off and no current can flow between the drain and source.
The STD35NF3LLT4 has a low Gate-Source threshold Voltage of 1.0V making it suitable for applications that require low power consumption and fast switching time. The MOSFET utilizes N-channel enhancement mode technology and its rated drain current is 3.0A, with a drain source voltage of 30V. The gate resistance is 5 Ohms maximum, giving it a low gate drive requirement. It also has a low package thermal resistance of 14.8OC/W.
The STD35NF3LLT4 is a power MOSFET with a wide variety of applications, it has a low threshold voltage and low power consumption, making it suitable for portable electronic devices. It can be used as a low side switch in battery circuits, as a switching regulator, as a power switch for DC-DC converters, and as a power amplifier for battery operated systems.
The specific data is subject to PDF, and the above content is for reference
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