STD3NK60ZT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-4102-2-ND |
Manufacturer Part#: |
STD3NK60ZT4 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 2.4A DPAK |
More Detail: | N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount DP... |
DataSheet: | STD3NK60ZT4 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31910 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 311pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The STD3NK60ZT4 is an N-channel enhancement mode Field Effect Transistor (FET). It is a part of the SuperFET II family of transistors produced by ON Semiconductor, a leading American semiconductor manufacturer. This transistor is well-suited for a variety of applications, and its three separate designs offer both easy operation and flexibility. This article will discuss the application field and working principle of this transistor in detail.
Features and Characteristics:
The STD3NK60ZT4 has several key features which make it an excellent choice for a variety of applications. It is an enhancement mode part, meaning that its outputs are driving transistors which switch on and off only in response to an appropriate stimulus. This makes it an ideal choice for automotive, medical, and industrial applications. Additionally, the transistor is designed with an exceptional degree of flexibility. The three distinct design variations offer varying levels of output current, gate threshold voltage, and reverse voltage protection. This, along with its low on-resistance, make it particularly suitable for a wide range of uses.
Application Field:
The STD3NK60ZT4 has a wide range of application fields, particularly in automotive, medical, and industrial applications. It is used extensively in power and load switching power supplies, motor drives, and amplifier circuits. Additionally, this transistor is often utilized in switching applications in motor controllers, adjustable power supplies, and line voltage and current regulators. Its low on-resistance allows for more efficient operation with maximum current transfer efficiency.
Working Principle:
The working principle of the STD3NK60ZT4 is based on FETs, or Field Effect Transistors. FETs are three terminal active devices with source, drain, and gate connections. The transistor has two p-type and one n-type regions connected in a vertical plane. It is in this plane that two junctions are formed. One junction is between the source and the drain, and the other junction is between the gate and the drain. The operation of the transistor is based on the modulation of the drain current in response to an applied gate voltage. The gate’s electrical field modulates the current flow between the source and the drain region, thus allowing the transistor to act as either a switch or an amplifier depending on the circuit configuration.
In the case of the STD3NK60ZT4, the transistor is an enhancement mode part, meaning that it only switches on and off in the presence of an appropriate gate voltage. This allows it to be used in switched mode power converters, motor controls, amplifier circuits, and other applications. When used as a power switch, the transistor is able to provide switching of high currents with extremely low power losses.
Conclusion:
The STD3NK60ZT4 is an N-channel Field Effect Transistor (FET), and part of the SuperFET II family of transistors produced by ON Semiconductor. It is an excellent choice for a wide range of applications, thanks to its ease of operation and flexibility. Its three separate designs offer varying levels of output current, gate threshold voltage, and reverse voltage protection. The working principle of the transistor is based on FETs, and it is able to provide switching of high currents with extremely low power losses. This makes it especially suitable for automotive, medical, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STD3NM50T4 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 550V 3A DPAKN... |
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STD36NH02L | STMicroelect... | -- | 1000 | MOSFET N-CH 24V 30A DPAKN... |
STD3NM60-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 600V 3A IPAKN... |
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STD3N62K3 | STMicroelect... | -- | 1000 | MOSFET N-CH 620V 2.7A DPA... |
STD35NF06LT4 | STMicroelect... | 0.5 $ | 1000 | MOSFET N-CH 60V 35A DPAKN... |
STD3N80K5 | STMicroelect... | -- | 1000 | MOSFET N-CH 800V 2.5A DPA... |
STD3NK90ZT4 | STMicroelect... | 0.55 $ | 1000 | MOSFET N-CH 900V 3A DPAKN... |
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