STD35NF06LT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-7965-2-ND |
Manufacturer Part#: |
STD35NF06LT4 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 35A DPAK |
More Detail: | N-Channel 60V 35A (Tc) 80W (Tc) Surface Mount DPAK |
DataSheet: | STD35NF06LT4 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.45846 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD35NF06LT4 is a low-voltage, low-gate charge, N-channel MOSFET. Its low gate charge increases efficiency and allows for higher switching frequencies. It is a small size, low gate charge MOSFET which is suitable for high frequency switching power supply circuits. It can handle larger currents than most of the other MOSFETs and this makes it ideal for power supply applications. The STD35NF06LT4 has two main applications: switching and power conversion. In switching applications, the MOSFET can be used to switch between two different voltage levels, allowing designs to be faster and more energy efficient. In power conversion applications, this MOSFET can be used to convert electrical power from one form to another, such as DC to AC or AC to DC.
The working principle of the STD35NF06LT4 is based on the gate voltage. When gate voltage is applied, it modulates the flow of current. The drain-source impedance is controlled by the gate voltage, which means that a lower gate voltage will result in a higher impedance, and a higher gate voltage will result in a lower impedance.In order to control the drain current and source current, the gate voltage must be adjusted. This can be done by adjusting the voltage source. Once the desired drain or source current is set, the gate voltage can be set to keep it constant.The MOSFET also has an ON state, which occurs when the gate voltage is above the threshold. When the gate voltage is above the threshold, the drain-source impedance will be lower and the current flow will be greater. Likewise, when the gate voltage is below the threshold, the impedance will be higher and the current flow will be lower.The STD35NF06LT4 MOSFET also has a drain-source capacitance that varies with the gate voltage. This capacitance is used to store energy and can help reduce switching losses in power circuits.The STD35NF06LT4 can also be used in low-frequency circuits. It is capable of switching at frequencies up to 100 KHz and can be used in power applications up to 50A. It is also designed to deliver fast switching speeds, making it an ideal choice for applications that require high switching frequencies and throughputs.
The STD35NF06LT4 is a versatile MOSFET that can be used in a variety of applications. Its low gate charge and efficient power management makes it ideal for switching and power conversion applications. It is a small and low gate-charge MOSFET that is ideal for high frequency switching power supplies. It also has high switching speed and a drain-source capacitance that helps reduce switching losses in power circuits. This makes it an ideal choice for both switching and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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