STD3NK50ZT4 Allicdata Electronics
Allicdata Part #:

497-4333-2-ND

Manufacturer Part#:

STD3NK50ZT4

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 2.3A DPAK
More Detail: N-Channel 500V 2.3A (Tc) 45W (Tc) Surface Mount DP...
DataSheet: STD3NK50ZT4 datasheetSTD3NK50ZT4 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.30936
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD3NK50ZT4 is a N-channel Field Effect Transistor (FET), or MOSFET, that is used in a wide variety of applications. The transistor is designed to handle up to 25 amperes of current and can operate at a frequency of up to 100MHz. It can also handle more than 20 volts of DC voltage and has good ESD protection.

This MOSFET can be used in a variety of applications, but is most commonly used to amplify or switch electronic signals. It is used in power electronic circuits such as DC/DC converters, power inverters, power converters, power amplifiers and motor controllers. It is also used in communications and consumer electronics. The STD3NK50ZT4 is a popular choice for low power applications due to its low output capacitance and low on-resistance.

The working principle of the STD3NK50ZT4 involves the use of a gate and two source/drain terminals. The MOSFET is an insulated gate type, meaning that the gate voltage must be sufficient to break down the insulation between the source and drain terminals. When this happens, current can flow through the transistor. The amount of current that is allowed to flow through relies solely on the amount of voltage applied to the gate terminal.

When a sufficient voltage is applied to the gate, electrons will be attracted to the gate and flow across the semiconductor. This will create a conductive channel between the source and drain terminals. This allows current to flow from the source to the drain, dependent upon the voltage applied to the gate. Increasing the voltage applied to the gate will increase the amount of current that can flow through the MOSFET.

The STD3NK50ZT4 can be used in many different applications. It is commonly used for power control, speed control and signal switching. It is also used for over-current and short-circuit protection. It can also be used as a bridge driver in motor drives and as an inverter switch in DC-DC converters.

The STD3NK50ZT4 is an extremely versatile device that can be used in many different applications. It is capable of operating at high current levels and frequencies. It is also highly durable, with good ESD protection. It is an excellent choice for low power applications due to its low output capacitance and low on-resistance.

The specific data is subject to PDF, and the above content is for reference

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