STD3NK90ZT4

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The STD3NK90ZT4 is a silicon four-channel power MOSFET device with a high current capability. This type of MOSFET is designed for high-power applications and is rated for a total maximum current capacity up to 140 A at 25 °C junction temperature and up to 110 A at 100 °C junction temperature. It is also rated to withstand a maximum avalanche current of up to 200 A.

The STD3NK90ZT4 has a wide range of applications, from high-power switching to low-voltage power amplifiers and from high-efficiency power systems to car audio applications. This device can be used in a variety of applications, including power converters, power supplies, motor drives, robotics and LED lighting. It is also suitable for automotive electronic applications, as it offers superior robustness.

The working principle of the MOSFET is based on the same principles as the other types of transistors. A MOSFET is a three-terminal device that consists of a source of electrons, an on/off switch, and a drain to collect the electrons. When a voltage is applied to the gate terminal, the MOSFET is turned on and electrons flow from the source to the drain. This voltage must be high enough to create a channel between the source and drain, but not so high that it exceeds the device\'s breakdown voltage.

The key feature of the STD3NK90ZT4 is its superior efficiency and robust performance. It has a very low ON-resistance of 2.2 mΩ, making it suitable for use in high-efficiency power converters and other applications where low switching losses are desired. Its high avalanche energy and energy rating of about 6.4 mJ make it well-suited for use in car audio applications, where high switching rates and low distortion are required.

In addition, the STD3NK90ZT4 is considered to be highly reliable, as its on-resistance is relatively constant over a wide temperature range and its gate-source Schottky diodes have a reverse breakdown voltage of 8.5 V. This feature prevents false turn-on due to inductive flyback or capacitor voltage spikes. The device features a reverse diodes peripheral circuit, which improves the gate-drain current drive capability so that the device can be used in high-power applications with higher reliability and lower gate-source charge.

The STD3NK90ZT4 MOSFET is an excellent choice for any application requiring high current and high switching rates, such as power converters, automotive applications, and car audio applications. Its wide range of features, excellent performance, and robustness make it an ideal choice for a variety of applications.

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